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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
TRS10H120H,S1Q Toshiba Semiconductor and Storage

TRS10H120H,S1Q

1200V 3RDGEN SIC-SBD 10A TO-247-

Toshiba Semiconductor and Storage

60
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 1148pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
1N6641US/TR Microchip Technology

1N6641US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

70
Datasheet - SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - - - Surface Mount D-5D -65°C ~ 175°C
1N3595AUS/TR Microchip Technology

1N3595AUS/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

99
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V 8pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
1N5418USE3/TR Microchip Technology

1N5418USE3/TR

UFR,FRR

Microchip Technology

70
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
STPSC20G12WL STMicroelectronics

STPSC20G12WL

1200 V, 20 A HIGH SURGE SILICON

STMicroelectronics

96
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 1200 V 1548pF @ 0V, 1MHz - - Through Hole DO-247 LL -55°C ~ 175°C
1N3595AUR-1/TR Microchip Technology

1N3595AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

85
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - - - Surface Mount DO-213AA -65°C ~ 175°C
VS-95PF160 Vishay General Semiconductor - Diodes Division

VS-95PF160

DIODE GEN PURP 1.6KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

54
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
1N5415US/TR Microchip Technology

1N5415US/TR

UFR,FRR

Microchip Technology

97
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
TRS15H120H,S1Q Toshiba Semiconductor and Storage

TRS15H120H,S1Q

1200V 3RDGEN SIC-SBD 15A TO-247-

Toshiba Semiconductor and Storage

60
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.45 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1673pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
S3D60065H2 SMC Diode Solutions

S3D60065H2

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

100
Datasheet - TO-247-2 Tube Active - - - - - - - - - - Through Hole TO-247AC -
VS-40HFR160 Vishay General Semiconductor - Diodes Division

VS-40HFR160

DIODE GEN PURP 1.6KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

37
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
JANTXV1N5617 Microchip Technology

JANTXV1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

64
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 175°C
ADS120J020C3-ASATH Luminus Devices Inc.

ADS120J020C3-ASATH

DIODE 1200V-20A TO220-2L, AUTOMO

Luminus Devices Inc.

87
Datasheet Sanan TO220 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.35 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V - Automotive - Through Hole TO-220-2L -55°C ~ 175°C
1N4946US/TR Microchip Technology

1N4946US/TR

UFR,FRR

Microchip Technology

98
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
VS-70HFLR20S02 Vishay General Semiconductor - Diodes Division

VS-70HFLR20S02

DIODE GP REV 200V 70A DO203AB

Vishay General Semiconductor - Diodes Division

85
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
TRS20H120H,S1Q Toshiba Semiconductor and Storage

TRS20H120H,S1Q

1200V 3RDGEN SIC-SBD 20A TO-247-

Toshiba Semiconductor and Storage

60
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 61A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 1200 V 2070pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
S5D25170F SMC Diode Solutions

S5D25170F

1700V, 25A, ITO-220AC, SIC SCHOT

SMC Diode Solutions

50
Datasheet - - Tube Active - - - - - - - - - - - - -
S5D25170A SMC Diode Solutions

S5D25170A

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

28
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 66A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 2400pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-41HF120 Vishay General Semiconductor - Diodes Division

VS-41HF120

DIODE GEN PURP 1.2KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

98
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
1N5820USE3/TR Microchip Technology

1N5820USE3/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

135
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Schottky 20 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - - - Surface Mount B, SQ-MELF -65°C ~ 125°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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