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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FX2000G Diotec Semiconductor

FX2000G

DIODE GEN PURP 400V 20A P600

Diotec Semiconductor

500
Datasheet - P600, Axial Cut Tape (CT) Active Standard 400 V 20A 940 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 400 V - - - Through Hole P600 -50°C ~ 150°C
VS-8ETH06S-M3 Vishay General Semiconductor - Diodes Division

VS-8ETH06S-M3

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

94
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 8A 2.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 50 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
ST40250 SMC Diode Solutions

ST40250

250V, 40A, TO-220AC, ULTRA LOW V

SMC Diode Solutions

808
Datasheet - TO-220-2 Tube Active Schottky 250 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 250 V 690pF @ 5V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
STPS30SM120SFP STMicroelectronics

STPS30SM120SFP

DIODE SCHOTT 120V 30A TO220FPAB

STMicroelectronics

46
Datasheet ECOPACK®2 TO-220-3 Full Pack Tube Active Schottky 120 V 30A 950 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 275 µA @ 120 V - - - Through Hole TO-220FPAB 150°C (Max)
MBR60200W SMC Diode Solutions

MBR60200W

200V, 60A, TO-247AC, DIODE SCHOT

SMC Diode Solutions

149
Datasheet - TO-247-2 Tube Active Schottky 200 V 75A 900 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V 2000pF @ 5V, 1MHz - - Through Hole TO-247AC -55°C ~ 150°C
STPS20L15D STMicroelectronics

STPS20L15D

DIODE SCHOTTKY 15V 20A TO220AC

STMicroelectronics

75
Datasheet - TO-220-2 Tube Active Schottky 15 V 20A 410 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 6 mA @ 15 V - - - Through Hole TO-220AC 125°C (Max)
P2500MH Taiwan Semiconductor Corporation

P2500MH

25A, 1000V, STANDARD RECOVERY RE

Taiwan Semiconductor Corporation

841
Datasheet - DO-201AD, Axial Tape & Reel (TR) Active Standard 1000 V 25A 870 mV @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V - Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 175°C
P2500M Taiwan Semiconductor Corporation

P2500M

25A, 1000V, STANDARD RECOVERY RE

Taiwan Semiconductor Corporation

816
Datasheet - DO-201AD, Axial Tape & Reel (TR) Active Standard 1000 V 25A 870 mV @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V - Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 175°C
1N5616 Microchip Technology

1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

91
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - - - Through Hole A, Axial -65°C ~ 200°C
IDP30E120XKSA1 Infineon Technologies

IDP30E120XKSA1

DIODE GP 1.2KV 50A TO220-2-2

Infineon Technologies

62
Datasheet - TO-220-2 Tube Active Standard 1200 V 50A 2.15 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 243 ns 100 µA @ 1200 V - - - Through Hole PG-TO220-2-2 -55°C ~ 150°C
IDH08G65C6XKSA1 Infineon Technologies

IDH08G65C6XKSA1

DIODE SIL CARB 650V 20A TO220-2

Infineon Technologies

36
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.35 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 27 µA @ 420 V 401pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
VS-45EPS16LHM3 Vishay General Semiconductor - Diodes Division

VS-45EPS16LHM3

DIODE GEN PURP 1.6KV 45A TO247AD

Vishay General Semiconductor - Diodes Division

51
Datasheet - TO-247-2 Tube Active Standard 1600 V 45A 1.16 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
STTH1512PI STMicroelectronics

STTH1512PI

DIODE GEN PURP 1.2KV 15A DOP3I

STMicroelectronics

75
Datasheet - DOP3I-2 Insulated (Straight Leads) Tube Active Standard 1200 V 15A 2.1 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 15 µA @ 1200 V - - - Through Hole DOP3I 175°C (Max)
IDH12G65C6XKSA1 Infineon Technologies

IDH12G65C6XKSA1

DIODE SIL CARB 650V 27A TO220-2

Infineon Technologies

74
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 27A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 420 V 594pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
JANTX1N5620 Microchip Technology

JANTX1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

47
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTX1N5551 Microchip Technology

JANTX1N5551

DIODE GEN PURP 400V 5A AXIAL

Microchip Technology

83
Datasheet - B, Axial Bulk Active Standard 400 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
1N5711 Microchip Technology

1N5711

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

87
Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
VS-40HFR40 Vishay General Semiconductor - Diodes Division

VS-40HFR40

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division

99
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
JANTX1N5809 Microchip Technology

JANTX1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

68
Datasheet - B, Axial Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
1N5618US Microchip Technology

1N5618US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

35
Datasheet - SQ-MELF, A Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - - - Surface Mount D-5A -65°C ~ 200°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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