Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FT2000KADIODE GEN PURP 50V 20A TO220AC |
98,840 |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 50 V | 20A | 960 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 50 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 150°C |
|
SBX2550DIODE SCHOTTKY 50V 25A P600 |
500 |
|
Datasheet | - | P600, Axial | Tape & Reel (TR) | Active | Schottky | 50 V | 25A | 570 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | - | - | Through Hole | P600 | -50°C ~ 150°C |
|
KT20A150DIODE GEN PURP 150V 20A TO220AC |
1,050 |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 150 V | 20A | 980 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 150 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
KT20K150DIODE GEN PURP 150V 20A TO220AC |
433 |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 150 V | 20A | 980 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 150 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
ADC6D10065GDIODE SIL SIC 650V 36A TO263-2 |
1,000 |
|
Datasheet | WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 650 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 |
12,385 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
QSD50HCS120U1200v 50amp SiC Schottky Barrier |
1,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 149A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 2380000pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
NC1D120C20KTNGSiC Schottky 1200V 20A TO247- 2L |
500 |
|
Datasheet | NC1D | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 1371pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
P2500YDIODE AVALANCHE 2KV 25A P600 |
8,000 |
|
Datasheet | - | P600, Axial | Tape & Reel (TR) | Active | Avalanche | 2000 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 2 V | - | - | - | Through Hole | P600 | -50°C ~ 175°C |
|
ADC3D10065IDIODE SIL SIC 1200V 10A TO220 |
550 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 650 V | 6.3pF @ 200V, 100kHz | - | - | Through Hole | TO-220F | -40°C ~ 175°C |
|
QSD10HCS120USchottky barrier diode 1200v 10a |
1,600 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 770pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
NC1D120C30KTNGSiC Schottky 1200V 30A TO247- 2L |
300 |
|
Datasheet | NC1D | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 85 µA @ 1200 V | 2125pF @ 0.1V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
FFSH20120ASILICON CARBIDE SCHOTTKY DIODE |
900 |
|
Datasheet | - | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | - | - | Through Hole | TO-247-2 | - |
|
QSD25HCS170U1700v 25amp SiC Schottky Barrier |
1,233 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 94A | 1.9 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 2822pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NC1D120C40GTDNSiC Diode 1200V 40A Dual Die TO2 |
300 |
|
Datasheet | NC1D | TO-247-3L | Tube | Active | SiC (Silicon Carbide) Schottky | 1.2 kV | 40A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | - | 50 µA @ 1.2 kV | 1371pF @ 100mV, 1MHz | - | - | Through Hole | TO-247-3L | -55°C ~ 175°C |
|
NC1D120C60GTDNSiC Schottky 1200V 60A TO247- 3L |
300 |
|
Datasheet | - | TO-247-3L | Tube | Active | SiC (Silicon Carbide) Schottky | - | 60A | - | - | - | - | 2125pF @ 0.1V, 1MHz | - | - | Surface Mount | TO-247-3L | -55°C ~ 175°C |
|
ADC4D10120EDIODE SIL CARB 1200V 33A TO252-3 |
400 |
|
Datasheet | WBG | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
ADC4D10120HDIODE SIL SIC 1200V 31.5A TO247- |
950 |
|
Datasheet | WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
ADE4D20120GDIODE SIL SIC 1200V 56A TO263-2 |
600 |
|
Datasheet | WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
ADC4D20120HDIODE SIL SIC 1200V 54A TO247-2 |
800 |
|
Datasheet | WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 10 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.