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FILTERED COMPONENT SELECTION

Single Diodes

Review Single Diodes Rectifiers components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
TRS4E65H,S1Q Toshiba Semiconductor and Storage

TRS4E65H,S1Q

G3 SIC-SBD 650V 4A TO-220-2L

Toshiba Semiconductor and Storage

341
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.35 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS6V65H,LQ Toshiba Semiconductor and Storage

TRS6V65H,LQ

G3 SIC-SBD 650V 6A DFN8X8

Toshiba Semiconductor and Storage

4,803
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS6E65H,S1Q Toshiba Semiconductor and Storage

TRS6E65H,S1Q

G3 SIC-SBD 650V 6A TO-220-2L

Toshiba Semiconductor and Storage

194
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS8E65H,S1Q Toshiba Semiconductor and Storage

TRS8E65H,S1Q

G3 SIC-SBD 650V 8A TO-220-2L

Toshiba Semiconductor and Storage

338
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.35 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 520pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS10V65H,LQ Toshiba Semiconductor and Storage

TRS10V65H,LQ

G3 SIC-SBD 650V 10A DFN8X8

Toshiba Semiconductor and Storage

3,975
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 649pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS12V65H,LQ Toshiba Semiconductor and Storage

TRS12V65H,LQ

G3 SIC-SBD 650V 12A DFN8X8

Toshiba Semiconductor and Storage

4,472
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 778pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS12E65H,S1Q Toshiba Semiconductor and Storage

TRS12E65H,S1Q

G3 SIC-SBD 650V 12A TO-220-2L

Toshiba Semiconductor and Storage

370
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 778pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
CBS10S40,L3F Toshiba Semiconductor and Storage

CBS10S40,L3F

DIODE SCHOTTKY 40V 1A CST2B

Toshiba Semiconductor and Storage

8,993
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 40 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 40 V 120pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
CBS10S30,L3F Toshiba Semiconductor and Storage

CBS10S30,L3F

DIODE SCHOTTKY 20V 1A CST2B

Toshiba Semiconductor and Storage

6,608
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 20 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 135pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
CCS15S30,L3F Toshiba Semiconductor and Storage

CCS15S30,L3F

DIODE SCHOTTKY 20V 1.5A CST2C

Toshiba Semiconductor and Storage

29,761
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 20 V 1.5A 400 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 200pF @ 0V, 1MHz - - Surface Mount CST2C 125°C (Max)
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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