Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXPSC16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
3,106 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC04650T6JDIODE SIL CARBIDE 650V 4A 5DFN |
4,442 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 141pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
NXPSC12650B6JDIODE SIL CARBIDE 650V 12A D2PAK |
2,892 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC10650T6JDIODE SIL CARBIDE 650V 10A 5DFN |
7,135 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
WNSC08650T6JDIODE SIL CARBIDE 650V 8A 5DFN |
8,999 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
VS-C20CP07L-M3DIODE SIL CARB 650V 10A TO220AC |
5,592 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55 µA @ 650 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-C16CP07L-M3DIODE SIL CARB 650V 16A TO220AC |
6,963 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85 µA @ 650 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SM4001-CTDIODE GP 50V 1A MELF DO-213AB |
8,040 |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
P2500X-CTDIODE AVALANCHE 1.8KV 25A P600 |
9,312 |
|
Datasheet | - | P600, Axial | Strip | Active | Avalanche | 1800 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1.8 V | - | - | - | Through Hole | P600 | -55°C ~ 175°C |
|
1N4005GP-AQ-CTDIODE GEN PURP 600V 1A DO41 |
4,442 |
|
Datasheet | - | DO-204AC, DO-41, Axial | Strip | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | - | - | Through Hole | DO-204AC (DO-41) | -50°C ~ 175°C |
|
SM5406-CTDIODE GP 600V 3A MELF DO-213AB |
8,271 |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 600 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
SM4007-CTDIODE GP 1KV 1A MELF DO-213AB |
2,031 |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
BY550-50-CTDIODE GEN PURP 50V 5A DO201 |
7,342 |
|
Datasheet | - | DO-201AA, DO-27, Axial | Strip | Active | Standard | 50 V | 5A | 1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | - | - | Through Hole | DO-201 | -50°C ~ 175°C |
|
SM4003-CTDIODE GP 200V 1A MELF DO-213AB |
4,618 |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
P600G-CTDIODE GEN PURP 400V 6A P600 |
7,066 |
|
Datasheet | - | P600, Axial | Strip | Active | Standard | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 400 V | - | - | - | Through Hole | P600 | -50°C ~ 150°C |
|
SM4002-CTDIODE GP 100V 1A MELF DO-213AB |
3,475 |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
GL34B-CTDIODE GP 100V 500MA DO213AA |
2,178 |
|
Datasheet | - | DO-213AA | Strip | Active | Standard | 100 V | 500mA | 1.2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | - | - | Surface Mount | DO-213AA (MINIMELF) | -50°C ~ 175°C |
|
P600B-CTDIODE GEN PURP 100V 6A P600 |
6,465 |
|
Datasheet | - | P600, Axial | Strip | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 100 V | - | - | - | Through Hole | P600 | -50°C ~ 175°C |
|
BY550-200-CTDIODE GEN PURP 200V 5A DO201 |
7,792 |
|
Datasheet | - | DO-201AA, DO-27, Axial | Strip | Active | Standard | 200 V | 5A | 1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | - | - | Through Hole | DO-201 | -50°C ~ 175°C |
|
BY133-CTDIODE GEN PURP 1.3KV 1A DO41 |
9,567 |
|
Datasheet | - | DO-204AC, DO-41, Axial | Strip | Active | Standard | 1300 V | 1A | 1.3 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1.3 V | - | - | - | Through Hole | DO-204AC (DO-41) | -50°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.