Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GB02SHT01-46DIODE SIL CARBIDE 100V 4A TO46 |
6,492 |
|
Datasheet | - | TO-206AB, TO-46-3 Metal Can | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 100 V | 4A | 1.6 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 100 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-46 | -55°C ~ 210°C |
|
VS-1EFH01WHM3-18DIODE GEN PURP 100V 1A DO219AB |
3,717 |
|
Datasheet | FRED Pt® | DO-219AB | Tape & Reel (TR) | Obsolete | Standard | 100 V | 1A | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 2 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -65°C ~ 175°C |
|
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VS-1EFH01W-M3-18DIODE GEN PURP 100V 1A DO219AB |
5,109 |
|
Datasheet | FRED Pt® | DO-219AB | Tape & Reel (TR) | Obsolete | Standard | 100 V | 1A | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 2 µA @ 100 V | - | - | - | Surface Mount | DO-219AB (SMF) | -65°C ~ 175°C |
|
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VS-1EFH02W-M3-18DIODE GEN PURP 200V 1A DO219AB |
4,394 |
|
Datasheet | FRED Pt® | DO-219AB | Tape & Reel (TR) | Obsolete | Standard | 200 V | 1A | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 2 µA @ 200 V | - | - | - | Surface Mount | DO-219AB (SMF) | -65°C ~ 175°C |
|
BYC8B-600PQPDIODE GEN PURP 600V 8A D2PAK |
4,645 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 3.4 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 18 ns | 20 µA @ 600 V | - | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
GP2D050A120BDIODE SIL CARB 1.2KV 50A TO247-2 |
8,045 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3174pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C2D05120E-TRDIODE SIL CARB 1.2KV 17.5A TO252 |
8,288 |
|
Datasheet | Zero Recovery™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 17.5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 455pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GP2D003A065ADIODE SIL CARB 650V 3A TO220-2 |
7,306 |
|
Datasheet | Amp+™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 158pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
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GP2D005A120ADIODE SIL CARB 1.2KV 5A TO220-2 |
9,665 |
|
Datasheet | Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP2D005A120CDIODE SIL CARB 1.2KV 5A TO252-2L |
8,410 |
|
Datasheet | Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
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GP2D005A170BDIODE SIL CARB 1.7KV 5A TO247-2 |
3,053 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 5A | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 406pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
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GP2D006A065ADIODE SIL CARB 650V 6A TO220-2 |
4,038 |
|
Datasheet | Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP2D006A065CDIODE SIL CARB 650V 6A TO252-2L |
9,030 |
|
Datasheet | Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
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GP2D010A120ADIODE SIL CARB 1.2KV 10A TO220-2 |
7,035 |
|
Datasheet | Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
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GP2D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 |
6,089 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GP2D010A120CDIODE SIL CARB 1.2KV 10A TO252L |
7,338 |
|
Datasheet | Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
GP2D010A170BDIODE SIL CARB 1.7KV 10A TO247-2 |
8,424 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 812pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
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GP2D020A120BDIODE SIL CARB 1.2KV 20A TO247-2 |
2,108 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 1270pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
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GP2D020A170BDIODE SIL CARB 1.7KV 20A TO247-2 |
7,267 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 20A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 1624pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
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GP2D030A120BDIODE SIL CARB 1.2KV 30A TO247-2 |
4,014 |
|
Datasheet | Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1905pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
