Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SB10-05A3-AT1DIODE SCHOTTKY 50V 1A DO41 |
5,897 |
|
Datasheet | - | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Schottky | 50 V | 1A | 580 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 mA @ 50 V | - | - | - | Through Hole | DO-41 | 125°C (Max) |
|
SB10-05A3-BTDIODE SCHOTTKY 50V 1A DO41 |
9,599 |
|
Datasheet | - | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Schottky | 50 V | 1A | 580 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 mA @ 50 V | - | - | - | Through Hole | DO-41 | 125°C (Max) |
|
SBE801-TL-HDIODE SCHOTTKY 2A 30V CPH5 |
4,303 |
|
Datasheet | * | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
C3D1P7060QDIODE SIL CARB 600V 9.7A 10QFN |
6,720 |
|
Datasheet | Z-Rec® | 10-PowerTQFN | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 9.7A | 1.7 V @ 1.7 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 100pF @ 0V, 1MHz | - | - | Surface Mount | 10-Power QFN (3.3x3.3) | -55°C ~ 160°C |
|
GPP100MS-E3/54DIODE GEN PURP 1KV 10A P600 |
2,691 |
|
Datasheet | - | P600, Axial | Tape & Reel (TR) | Obsolete | Standard | 1000 V | 10A | 1.05 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 5.5 µs | 5 µA @ 1000 V | 110pF @ 4V, 1MHz | - | - | Through Hole | P600 | -55°C ~ 175°C |
|
IDH10G65C5XKSA1DIODE SIL CARB 650V 10A TO220-2 |
7,297 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 340 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH05G65C5XKSA1DIODE SIL CARB 650V 5A TO220-2-2 |
2,413 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 160pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH08G65C5XKSA1DIODE SIL CARB 650V 8A TO220-2-2 |
4,174 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 280 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDW40G65C5FKSA1DIODE SIL CARB 650V 40A TO247-3 |
3,629 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 1.4 mA @ 650 V | 1140pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
IDH20G65C5XKSA1DIODE SIL CARB 650V 20A TO220-2 |
3,626 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 700 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDW10G65C5FKSA1DIODE SIL CARB 650V 10A TO247-3 |
5,244 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
IDH03G65C5XKSA1DIODE SIL CARB 650V 3A TO220-2-2 |
5,340 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 100pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH06G65C5XKSA1DIODE SIL CARB 650V 6A TO220-2-2 |
8,969 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH04G65C5XKSA1DIODE SIL CARB 650V 4A TO220-2-2 |
2,826 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDW12G65C5FKSA1DIODE SIL CARB 650V 12A TO247-3 |
9,222 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
IDW16G65C5FKSA1DIODE SIL CARB 650V 16A TO247-3 |
3,635 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
IDW20G65C5FKSA1DIODE SIL CARB 650V 20A TO247-3 |
4,510 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 700 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
IDH09G65C5XKSA1DIODE SIL CARB 650V 9A TO220-2-2 |
9,643 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 310 µA @ 650 V | 270pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH16G65C5XKSA1DIODE SIL CARB 650V 16A TO220-2 |
8,688 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 550 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
CD1206-S01575DIODE GEN PURP 100V 150MA 1206 |
4,511 |
|
Datasheet | - | 1206 (3216 Metric) | Tape & Reel (TR) | Obsolete | Standard | 100 V | 150mA | 1 V @ 50 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 2.5 µA @ 100 V | 3pF @ 0V, 100MHz | - | - | Surface Mount | 1206 | -55°C ~ 125°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
