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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
HFA140NH60 Vishay General Semiconductor - Diodes Division

HFA140NH60

DIODE GEN PURP 600V 140A D-67

Vishay General Semiconductor - Diodes Division

2,226
Datasheet HEXFRED® D-67 HALF-PAK Bulk Obsolete Standard 600 V 140A 1.6 V @ 140 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 40 µA @ 600 V - - - Chassis Mount D-67 HALF-PAK -
HFA140NH60R Vishay General Semiconductor - Diodes Division

HFA140NH60R

DIODE GEN PURP 600V 140A D-67

Vishay General Semiconductor - Diodes Division

2,546
Datasheet HEXFRED® D-67 HALF-PAK Bulk Obsolete Standard 600 V 140A 1.6 V @ 140 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 40 µA @ 600 V - - - Chassis Mount D-67 HALF-PAK -
VS-T110HF10 Vishay General Semiconductor - Diodes Division

VS-T110HF10

DIODE GEN PURP 100V 110A D-55

Vishay General Semiconductor - Diodes Division

4,052
Datasheet - D-55 T-Module Bulk Active Standard 100 V 110A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 100 V - - - Chassis Mount D-55 -
VS-T20HF220 Vishay General Semiconductor - Diodes Division

VS-T20HF220

DIODE GEN PURP 2.2KV 20A D-55

Vishay General Semiconductor - Diodes Division

2,624
Datasheet - D-55 T-Module Bulk Obsolete Standard 2200 V 20A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 18 mA @ 2200 V - - - Chassis Mount D-55 -40°C ~ 150°C
VS-T85HF80 Vishay General Semiconductor - Diodes Division

VS-T85HF80

DIODE GEN PURP 800V 85A D-55

Vishay General Semiconductor - Diodes Division

6,966
Datasheet - D-55 T-Module Bulk Active Standard 800 V 85A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 800 V - - - Chassis Mount D-55 -
JANTXV1N5712-1 Microchip Technology

JANTXV1N5712-1

DIODE SCHOTTKY 16V 33MA DO35

Microchip Technology

8,958
Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 16 V 33mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N6536 Microchip Technology

1N6536

DIODE GEN PURP 400V 1A A AXIAL

Microchip Technology

5,894
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 400 V - - - Through Hole A, Axial -
VS-T85HF100 Vishay General Semiconductor - Diodes Division

VS-T85HF100

DIODE GEN PURP 1KV 85A D-55

Vishay General Semiconductor - Diodes Division

8,593
Datasheet - D-55 T-Module Bulk Active Standard 1000 V 85A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1000 V - - - Chassis Mount D-55 -
UES1003 Microchip Technology

UES1003

DIODE GEN PURP 150V 1A A AXIAL

Microchip Technology

7,286
Datasheet - A, Axial Bulk Active Standard 150 V 1A 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Through Hole A, Axial -55°C ~ 175°C
JANS1N5811US Microchip Technology

JANS1N5811US

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

8,651
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5712-1/TR Microchip Technology

JANTXV1N5712-1/TR

DIODE SCHOTTKY 16V 33MA DO35

Microchip Technology

3,396
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 16 V 33mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
VS-T85HF120 Vishay General Semiconductor - Diodes Division

VS-T85HF120

DIODE GEN PURP 200V 85A D-55

Vishay General Semiconductor - Diodes Division

5,029
Datasheet - D-55 T-Module Bulk Active Standard 200 V 85A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 200 V - - - Chassis Mount D-55 -
1N6536/TR Microchip Technology

1N6536/TR

DIODE GP REV 400V 1A A AXIAL

Microchip Technology

4,958
Datasheet - A, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 400 V 1A 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 400 V - - - Through Hole A, Axial -
JANTX1N4148UB2R Microchip Technology

JANTX1N4148UB2R

DIODE GEN PURP 75V 200MA UB2R

Microchip Technology

7,703
Datasheet - 2-SMD, No Lead Bulk Active Standard, Reverse Polarity 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB2R -65°C ~ 200°C
JANTXV1N4148UB2R Microchip Technology

JANTXV1N4148UB2R

DIODE GEN PURP 75V 200MA UB

Microchip Technology

5,640
Datasheet - 3-SMD, No Lead Bulk Active Standard, Reverse Polarity 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
JANTXV1N6630US Microchip Technology

JANTXV1N6630US

DIODE GEN PURP 1KV 1.4A D-5B

Microchip Technology

3,094
Datasheet - SQ-MELF, E Bulk Active Standard 1000 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 1000 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6631US Microchip Technology

JANTXV1N6631US

DIODE GEN PURP 1.1KV 1.4A D-5B

Microchip Technology

4,548
Datasheet - SQ-MELF, E Bulk Active Standard 1100 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
UES1003/TR Microchip Technology

UES1003/TR

DIODE GEN PURP 150V 1A A AXIAL

Microchip Technology

3,460
Datasheet - A, Axial Tape & Reel (TR) Active Standard 150 V 1A 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Through Hole A, Axial -55°C ~ 175°C
JANTXV1N6630U Microchip Technology

JANTXV1N6630U

DIODE GP 990V 1.4A SQ-MELF B

Microchip Technology

9,658
Datasheet - SQ-MELF, B Bulk Active Standard 990 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 990 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N6631U Microchip Technology

JANTXV1N6631U

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

3,907
Datasheet - SQ-MELF, B Bulk Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - Military MIL-PRF-19500/590 Surface Mount E-MELF -65°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

BOM & COMPONENT SOURCING

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