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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6631U Microchip Technology

1N6631U

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

7,180
Datasheet - SQ-MELF, B Bulk Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
1N6628US/TR Microchip Technology

1N6628US/TR

DIODE GEN PURP 600V 2.3A D-5B

Microchip Technology

7,660
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 2.3A 1.5 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 600 V 40pF @ 10V, 1MHz - - Surface Mount D-5B -65°C ~ 150°C
1N6628U/TR Microchip Technology

1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Microchip Technology

6,757
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 660 V 40pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 150°C
1N6631US/TR Microchip Technology

1N6631US/TR

DIODE GEN PURP 1.1KV 1.4A A-MELF

Microchip Technology

8,807
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
1N6631U/TR Microchip Technology

1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

5,767
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
JANTX1N3646 Microchip Technology

JANTX1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,411
Datasheet - S, Axial Bulk Active Standard 1750 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
GB25MPS17-247 GeneSiC Semiconductor

GB25MPS17-247

DIODE SIL CARB 1.7KV 52A TO247-2

GeneSiC Semiconductor

6,756
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 52A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 2350pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5832R GeneSiC Semiconductor

1N5832R

DIODE SCHOTTKY REV 20V 40A DO5

GeneSiC Semiconductor

6,546
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 20 V 40A 520 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5833R GeneSiC Semiconductor

1N5833R

DIODE SCHOTTKY REV 30V 40A DO5

GeneSiC Semiconductor

2,466
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 30 V 40A 550 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5834R GeneSiC Semiconductor

1N5834R

DIODE SCHOTTKY REV 40V 40A DO5

GeneSiC Semiconductor

6,689
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 40 V 40A 590 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
HS24515E3 Microsemi Corporation

HS24515E3

DIODE SCHOTTKY 15V 240A HALF-PAK

Microsemi Corporation

8,047
Datasheet - HALF-PAK Tube Obsolete Schottky 15 V 240A 370 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 150 mA @ 15 V 21700pF @ 5V, 1MHz - - Chassis Mount HALF-PAK -
JANTXV1N6620US Microchip Technology

JANTXV1N6620US

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

2,170
Datasheet - SQ-MELF, A Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JAN1N6076 Microchip Technology

JAN1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

8,709
Datasheet - E, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6077 Microchip Technology

JAN1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,037
Datasheet - E, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTXV1N6620U Microsemi Corporation

JANTXV1N6620U

DIODE GEN PURP 200V 1.2A D-5A

Microsemi Corporation

3,057
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 200 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
DS75-12B IXYS

DS75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

4,175
Datasheet - DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
DSI75-12B IXYS

DSI75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

9,704
Datasheet - DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
JAN1N6628U Microsemi Corporation

JAN1N6628U

DIODE GEN PURP 600V 1.75A D-5B

Microsemi Corporation

9,997
Datasheet - SQ-MELF, E Bulk Active Standard 600 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6628US Microchip Technology

JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

2,873
Datasheet - SQ-MELF, E Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6630U Microsemi Corporation

JAN1N6630U

DIODE GEN PURP 900V 1.4A D-5B

Microsemi Corporation

6,375
Datasheet - SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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