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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CD6759 Microchip Technology

CD6759

DIODE SCHOTTKY 60V 1A DIE

Microchip Technology

9,689
Datasheet - Die Tape & Reel (TR) Active Schottky 60 V 1A 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V - Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
1N6621US/TR Microchip Technology

1N6621US/TR

DIODE GEN PURP 400V 2A D-5A

Microchip Technology

9,136
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 2A 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 400 V 10pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 150°C
1N6620U/TR Microchip Technology

1N6620U/TR

DIODE GP 220V 1.2A A SQ-MELF

Microchip Technology

6,614
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 220 V - - - Surface Mount A, SQ-MELF -65°C ~ 150°C
1N6621U/TR Microchip Technology

1N6621U/TR

DIODE GP 440V 1.2A A SQ-MELF

Microchip Technology

3,661
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 440 V - - - Surface Mount A, SQ-MELF -65°C ~ 150°C
VS-40HF140M Vishay General Semiconductor - Diodes Division

VS-40HF140M

DIODE GEN PURP 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

4,464
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
VS-40HF160M Vishay General Semiconductor - Diodes Division

VS-40HF160M

DIODE GEN PURP 1.6KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

9,337
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
VS-40HFR140M Vishay General Semiconductor - Diodes Division

VS-40HFR140M

DIODE GP REV 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

7,295
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1400 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
VS-40HFR160M Vishay General Semiconductor - Diodes Division

VS-40HFR160M

DIODE GP REV 1.6KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

6,464
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
JANTXV1N6620/TR Microchip Technology

JANTXV1N6620/TR

DIODE GEN PURP 220V 1.2A

Microchip Technology

8,436
Datasheet - A, Axial Tape & Reel (TR) Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JAN1N6628 Microchip Technology

JAN1N6628

DIODE GEN PURP 660V 1.75A AXIAL

Microchip Technology

4,789
Datasheet - E, Axial Bulk Active Standard 660 V 1.75A 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6631 Microchip Technology

JAN1N6631

DIODE GEN PURP 1.1KV 1.4A AXIAL

Microchip Technology

4,636
Datasheet - E, Axial Bulk Active Standard 1100 V 1.4A 1.6 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 1000 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6630 Microchip Technology

JAN1N6630

DIODE GEN PURP 900V 1.4A AXIAL

Microchip Technology

6,816
Datasheet - E, Axial Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTX1N3595AUS/TR Microchip Technology

JANTX1N3595AUS/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

2,169
Datasheet - SQ-MELF, D Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V 8pF @ 0V, 1MHz Military MIL-S-19500-241 Surface Mount D-5D -65°C ~ 175°C
VS-85EPF12 Vishay General Semiconductor - Diodes Division

VS-85EPF12

DIODE GP 1.2KV 85A POWIRTAB

Vishay General Semiconductor - Diodes Division

4,400
Datasheet - PowerTab™, PowIRtab™ Bulk Obsolete Standard 1200 V 85A 1.3 V @ 85 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 1200 V - - - Chassis Mount PowIRtab™ -40°C ~ 150°C
JANTX1N3595US/TR Microchip Technology

JANTX1N3595US/TR

DIODE GEN PURP 200MA B SQ-MELF

Microchip Technology

5,492
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard - 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Surface Mount B, SQ-MELF -65°C ~ 150°C
GB20SLT12-247 GeneSiC Semiconductor

GB20SLT12-247

DIODE SIL CARB 1.2KV 20A TO247-2

GeneSiC Semiconductor

4,263
Datasheet - TO-247-2 Bulk Obsolete SiC (Silicon Carbide) Schottky 1200 V 20A 2 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 968pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
FR40GR02 GeneSiC Semiconductor

FR40GR02

DIODE GEN PURP REV 400V 40A DO5

GeneSiC Semiconductor

2,837
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40BR02 GeneSiC Semiconductor

FR40BR02

DIODE GEN PURP REV 100V 40A DO5

GeneSiC Semiconductor

7,398
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40BR05 GeneSiC Semiconductor

FR40BR05

DIODE GEN PURP REV 100V 40A DO5

GeneSiC Semiconductor

2,481
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40DR02 GeneSiC Semiconductor

FR40DR02

DIODE GEN PURP REV 200V 40A DO5

GeneSiC Semiconductor

4,208
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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