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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S85MR GeneSiC Semiconductor

S85MR

DIODE GEN PURP REV 1KV 85A DO5

GeneSiC Semiconductor

2,225
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 85A 1.1 V @ 85 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - - - Chassis, Stud Mount DO-5 -65°C ~ 180°C
JANTX1N3645/TR Microchip Technology

JANTX1N3645/TR

DIODE GP REV 1.4KV 250MA S AXIAL

Microchip Technology

5,702
Datasheet - S, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 1400 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1400 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JAN1N5190/TR Microchip Technology

JAN1N5190/TR

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

3,835
Datasheet - B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 2 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
VS-86HFR80 Vishay General Semiconductor - Diodes Division

VS-86HFR80

DIODE GP REV 800V 8A DO203AB

Vishay General Semiconductor - Diodes Division

8,069
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 8A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JANTX1N5418US/TR Microchip Technology

JANTX1N5418US/TR

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

2,840
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 400 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
SICU0860P-TP Micro Commercial Co

SICU0860P-TP

DIODE SIL CARBIDE 650V 8A DPAK

Micro Commercial Co

3,996
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 36 µA @ 650 V 346pF @ 0V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
JANTX1N5416US Microchip Technology

JANTX1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

9,460
Datasheet - SQ-MELF, E Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
VS-71HF120 Vishay General Semiconductor - Diodes Division

VS-71HF120

DIODE GEN PURP 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

9,312
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
1N6543 Microchip Technology

1N6543

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

8,181
Datasheet - - Bulk Active - - - - - - - - - - - - -
JANTXV1N6642 Microchip Technology

JANTXV1N6642

DIODE GEN PURP 100V 300MA

Microchip Technology

2,969
Datasheet - Axial Bulk Active Standard 100 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - Military MIL-PRF-19500/578 Through Hole - -65°C ~ 175°C
JANTXV1N5554/TR Microchip Technology

JANTXV1N5554/TR

DIODE GEN PURP 1KV 5A

Microchip Technology

4,305
Datasheet - B, Axial Tape & Reel (TR) Active Standard 1000 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
PCFFS20120AF onsemi

PCFFS20120AF

DIODE SIL CARBIDE 1.2KV 20A DIE

onsemi

2,615
Datasheet - Die Tray Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.723 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V - - - Surface Mount Die 175°C (Max)
1N4305-1E3/TR Microchip Technology

1N4305-1E3/TR

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

6,163
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 200mA 850 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed 2 ns 100 nA @ 50 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JANTXV1N6642/TR Microchip Technology

JANTXV1N6642/TR

DIODE GEN PURP 100V 300MA

Microchip Technology

4,970
Datasheet - Axial Tape & Reel (TR) Active Standard 100 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - Military MIL-PRF-19500/578 Through Hole - -65°C ~ 175°C
1N6630/TR Microchip Technology

1N6630/TR

DIODE GEN PURP 990V 1.4A

Microchip Technology

4,361
Datasheet - A, Axial Tape & Reel (TR) Active Standard 990 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 990 V 40pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
DGS20-025A IXYS

DGS20-025A

DIODE SCHOTTKY 250V 18A TO220AC

IXYS

4,897
Datasheet - TO-220-2 Tube Obsolete Schottky 250 V 18A 1.5 V @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 250 V - - - Through Hole TO-220AC -55°C ~ 175°C
JANTX1N6638US MACOM Technology Solutions

JANTX1N6638US

DIODE GEN PURP 125V 300MA D-5D

MACOM Technology Solutions

9,401
Datasheet - SQ-MELF, D Bulk Discontinued at Digi-Key Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 100 µA @ 125 V - Military MIL-PRF-19500/578 & /609 Surface Mount D-5D -65°C ~ 175°C
S85V GeneSiC Semiconductor

S85V

DIODE GEN PURP 1.4KV 85A DO5

GeneSiC Semiconductor

6,315
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 85A 1.1 V @ 85 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N6631 Microchip Technology

1N6631

DIODE GEN PURP 1.1KV 1.4A AXIAL

Microchip Technology

9,371
Datasheet - A, Axial Bulk Discontinued at Digi-Key Standard 1100 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
JANTX1N5416US/TR Microchip Technology

JANTX1N5416US/TR

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

9,911
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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