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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6623E3 Microchip Technology

1N6623E3

DIODE GEN PURP 800V 1.5A AXIAL

Microchip Technology

6,221
Datasheet - Axial Bulk Active Standard 800 V 1.5A 1.8 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 800 V - - - Through Hole Axial -65°C ~ 175°C
JANTXV1N6639 Microchip Technology

JANTXV1N6639

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

7,645
Datasheet - D, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V - Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JANTXV1N6641 Microchip Technology

JANTXV1N6641

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

9,562
Datasheet - D, Axial Bulk Active Standard 50 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JANTXV1N6643 Microchip Technology

JANTXV1N6643

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

6,877
Datasheet - D, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
JANTXV1N6640 Microchip Technology

JANTXV1N6640

DIODE GEN PURP 50V 300MA DO35

Microchip Technology

3,698
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5550US Microchip Technology

JAN1N5550US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

3,859
Datasheet - SQ-MELF, E Bulk Discontinued at Digi-Key Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
1N6628/TR Microchip Technology

1N6628/TR

DIODE GEN PURP 600V 1.75A A-PAK

Microchip Technology

6,200
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
JANTXV1N5806US/TR Microchip Technology

JANTXV1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

9,425
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JAN1N3595AUR-1 Microchip Technology

JAN1N3595AUR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

2,527
Datasheet - DO-213AA Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
GKN71/14 GeneSiC Semiconductor

GKN71/14

DIODE GEN PURP 1.4KV 95A DO5

GeneSiC Semiconductor

6,360
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1400 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
VS-71HF100 Vishay General Semiconductor - Diodes Division

VS-71HF100

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

6,220
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1000 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JAN1N5802US Microchip Technology

JAN1N5802US

DIODE GEN PURP 50V 2.5A D-5A

Microchip Technology

2,019
Datasheet - SQ-MELF, A Bulk Active Standard 50 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
SIDC53D120H8X1SA1 Infineon Technologies

SIDC53D120H8X1SA1

DIODE GP 1.2KV 100A WAFER

Infineon Technologies

5,436
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1200 V 100A 1.97 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
VS-86HFR60 Vishay General Semiconductor - Diodes Division

VS-86HFR60

DIODE GP REV 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3,122
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-72HFR140 Vishay General Semiconductor - Diodes Division

VS-72HFR140

DIODE GP REV 1.4KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

5,304
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1400 V 70A 1.46 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
JANTX1N5188 Microchip Technology

JANTX1N5188

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

7,156
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5621 Microchip Technology

JANTXV1N5621

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

9,867
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5417US Microchip Technology

JANTX1N5417US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

9,866
Datasheet - SQ-MELF, E Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N5808 Microchip Technology

1N5808

DIODE RECT ULT FAST REC B-PKG

Microchip Technology

9,730
Datasheet * - Bulk Active - - - - - - - - - - - - -
1N5810 Microchip Technology

1N5810

DIODE GEN PURP 6A AXIAL

Microchip Technology

9,053
Datasheet - Axial Bulk Active Standard - 6A 875 mV @ 4 A Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole Axial -
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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