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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N6642U Microchip Technology

JANTXV1N6642U

DIODE GEN PURP 100V 300MA D-5D

Microchip Technology

9,383
Datasheet - SQ-MELF, D Bulk Active Standard 100 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5803US Microchip Technology

1N5803US

DIODE GEN PURP 80V 1A D-5A

Microchip Technology

3,380
Datasheet - SQ-MELF, A Bulk Active Standard 80 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
1N5805US Microchip Technology

1N5805US

DIODE GEN PURP 135V 1A D-5A

Microchip Technology

2,755
Datasheet - SQ-MELF, A Bulk Active Standard 135 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5550 Microchip Technology

JANTXV1N5550

DIODE GEN PURP 200V 5A AXIAL

Microchip Technology

9,635
Datasheet - B, Axial Bulk Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5189/TR Microchip Technology

JAN1N5189/TR

DIODE GEN PURP 500V 3A B AXIAL

Microchip Technology

5,911
Datasheet - B, Axial Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5188/TR Microchip Technology

JAN1N5188/TR

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,652
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N3595AUS Microchip Technology

JAN1N3595AUS

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,525
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N3595US Microchip Technology

JAN1N3595US

DIODE GEN PURP 125V 4A B SQ-MELF

Microchip Technology

5,671
Datasheet - SQ-MELF, B Bulk Active Standard 125 V 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs - - Military MIL-PRF-19500/241 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N5186 Microchip Technology

JANTXV1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

9,779
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 100 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
VS-70HFL40S05 Vishay General Semiconductor - Diodes Division

VS-70HFL40S05

DIODE GEN PURP 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division

5,884
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
VS-70HFL60S05 Vishay General Semiconductor - Diodes Division

VS-70HFL60S05

DIODE GEN PURP 600V 70A DO203AB

Vishay General Semiconductor - Diodes Division

6,084
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
VS-70HFLR60S05 Vishay General Semiconductor - Diodes Division

VS-70HFLR60S05

DIODE GP REV 600V 70A DO203AB

Vishay General Semiconductor - Diodes Division

2,769
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
129NQ135 Vishay General Semiconductor - Diodes Division

129NQ135

DIODE SCHOTTKY 135V 120A D-67

Vishay General Semiconductor - Diodes Division

9,595
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 135 V 120A 1.07 V @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 135 V 3000pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
JANTXV1N5619US Microchip Technology

JANTXV1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

5,665
Datasheet - SQ-MELF, A Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N6641US Microchip Technology

1N6641US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

5,544
Datasheet - SQ-MELF, D Bulk Active Standard 50 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - - - Surface Mount D-5D -65°C ~ 175°C
JANTX1N5802 Microchip Technology

JANTX1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

8,722
Datasheet - A, Axial Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5417US Microchip Technology

1N5417US

DIODE GEN PURP 200V 3A D5B

Microchip Technology

8,980
Datasheet - SQ-MELF, E Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Surface Mount D-5B -65°C ~ 175°C
CD5822 Microchip Technology

CD5822

DIODE SCHOTTKY 40V 3A DIE

Microchip Technology

8,733
Datasheet - Die Tape & Reel (TR) Active Schottky 40 V 3A 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - - - Surface Mount Die -65°C ~ 125°C
JANTXV1N5551 Microchip Technology

JANTXV1N5551

DIODE GEN PURP 400V 5A

Microchip Technology

6,725
Datasheet - B, Axial Bulk Active Standard 400 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5804US Microchip Technology

JAN1N5804US

DIODE GEN PURP 100V 2.5A D-5A

Microchip Technology

5,428
Datasheet - SQ-MELF, A Bulk Discontinued at Digi-Key Standard 100 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

BOM & COMPONENT SOURCING

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