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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5623/TR Microchip Technology

JAN1N5623/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

2,450
Datasheet - A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
VS-70HFLR40S05 Vishay General Semiconductor - Diodes Division

VS-70HFLR40S05

DIODE GP REV 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division

7,374
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
GP3D040A065U SemiQ

GP3D040A065U

DIODE SIL CARB 650V 40A TO247-3

SemiQ

3,520
Datasheet Amp+™ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 835pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
JANTX1N5553/TR Microchip Technology

JANTX1N5553/TR

DIODE GEN PURP 800V 5A

Microchip Technology

9,476
Datasheet - B, Axial Tape & Reel (TR) Active Standard 800 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5618 Microchip Technology

JANTXV1N5618

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

2,822
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTXV1N4245 Microchip Technology

JANTXV1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

7,684
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N6642 Microchip Technology

1N6642

DIODE GEN PURPOSE

Microchip Technology

3,955
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5553/TR Microchip Technology

1N5553/TR

STD RECTIFIER

Microchip Technology

2,724
Datasheet - B, Axial Tape & Reel (TR) Active Standard 800 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - - - Through Hole B, Axial -65°C ~ 175°C
VS-70HFL10S02 Vishay General Semiconductor - Diodes Division

VS-70HFL10S02

DIODE GEN PURP 100V 70A DO203AB

Vishay General Semiconductor - Diodes Division

7,756
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
FR12G02 GeneSiC Semiconductor

FR12G02

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor

4,606
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12J02 GeneSiC Semiconductor

FR12J02

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

5,764
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12B02 GeneSiC Semiconductor

FR12B02

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

5,000
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12D02 GeneSiC Semiconductor

FR12D02

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

5,710
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR16K05 GeneSiC Semiconductor

FR16K05

DIODE GEN PURP 800V 16A DO4

GeneSiC Semiconductor

3,550
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 800 V 16A 1.1 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N6620 Microchip Technology

1N6620

DIODE GEN PURP 220V 1.2A AXIAL

Microchip Technology

6,622
Datasheet - A, Axial Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
JPAD50 TO-92 2L Linear Integrated Systems, Inc.

JPAD50 TO-92 2L

DIODE GEN PURP 35V 10MA TO92

Linear Integrated Systems, Inc.

4,458
Datasheet PAD TO-226-2, TO-92-2 (TO-226AC) Bulk Active Standard 35 V 10mA 1.5 V @ 5 mA Small Signal =< 200mA (Io), Any Speed - 50 pA @ 20 V 1.5pF @ 5V, 1MHz - - Through Hole TO-92 -55°C ~ 150°C
JAN1N5617US Microchip Technology

JAN1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

8,424
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
FFSH20120A onsemi

FFSH20120A

DIODE SIL CARB 1.2KV 30A TO247-2

onsemi

2,749
Datasheet - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 30A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz - - Through Hole TO-247-2 -
JANTXV1N5618/TR Microchip Technology

JANTXV1N5618/TR

DIODE GEN PURP 600V 1A

Microchip Technology

2,472
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5187/TR Microchip Technology

JAN1N5187/TR

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

2,112
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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