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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-72HF60 Vishay General Semiconductor - Diodes Division

VS-72HF60

DIODE GEN PURP 600V 70A DO203AB

Vishay General Semiconductor - Diodes Division

5,429
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-72HFR60 Vishay General Semiconductor - Diodes Division

VS-72HFR60

DIODE GP REV 600V 70A DO203AB

Vishay General Semiconductor - Diodes Division

2,235
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
LSIC2SD065C10A Littelfuse Inc.

LSIC2SD065C10A

DIODE SIL CARB 650V 27A TO252

Littelfuse Inc.

8,889
Datasheet Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 27A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 470pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SCS308AMC Rohm Semiconductor

SCS308AMC

DIODE SIL CARB 650V 8A TO220FM

Rohm Semiconductor

1
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
1N5806USE3/TR Microchip Technology

1N5806USE3/TR

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

3,742
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
1N4249/TR Microchip Technology

1N4249/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

6,042
Datasheet - A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1 V - - - Through Hole A, Axial -65°C ~ 175°C
SICB0860P-TP Micro Commercial Co

SICB0860P-TP

DIODE SIL CARBIDE 650V 8A D2PAK

Micro Commercial Co

8,987
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 36 µA @ 650 V 346pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
JANTX1N4944/TR Microchip Technology

JANTX1N4944/TR

DIODE GEN PURP 400V 1A

Microchip Technology

8,808
Datasheet - A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
SIC15120Y-BP Micro Commercial Co

SIC15120Y-BP

SCHOTTKY DIODES

Micro Commercial Co

7,078
Datasheet - TO-220-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.45 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 1200 V 1552pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
JANTX1N3957 Microchip Technology

JANTX1N3957

DIODE GEN PURP 1KV 1A

Microchip Technology

6,969
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1000 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5622/TR Microchip Technology

JANTX1N5622/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,611
Datasheet - A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N4943/TR Microchip Technology

1N4943/TR

UFR,FRR

Microchip Technology

3,149
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - -
VS-41HF40 Vishay General Semiconductor - Diodes Division

VS-41HF40

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division

2,910
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-41HFR40 Vishay General Semiconductor - Diodes Division

VS-41HFR40

DIODE GP REV 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division

3,107
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
PCDD05120G1_L2_00001 Panjit International Inc.

PCDD05120G1_L2_00001

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

4,803
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 252pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
JAN1N5415 Microchip Technology

JAN1N5415

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

4,694
Datasheet - B, Axial Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5416 Microchip Technology

JAN1N5416

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

7,063
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N6643US Microchip Technology

JAN1N6643US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

3,232
Datasheet - SQ-MELF, D Bulk Discontinued at Digi-Key Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
VS-72HF80 Vishay General Semiconductor - Diodes Division

VS-72HF80

DIODE GEN PURP 800V 70A DO203AB

Vishay General Semiconductor - Diodes Division

8,971
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
VS-72HFR80 Vishay General Semiconductor - Diodes Division

VS-72HFR80

DIODE GP REV 800V 70A DO203AB

Vishay General Semiconductor - Diodes Division

9,161
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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