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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTX1N3612/TR Microchip Technology

JANTX1N3612/TR

DIODE GEN PURP 400V 1A

Microchip Technology

6,600
Datasheet - A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
VS-150EBU02 Vishay General Semiconductor - Diodes Division

VS-150EBU02

DIODE GP 200V 150A POWIRTAB

Vishay General Semiconductor - Diodes Division

8,774
Datasheet FRED Pt® PowerTab™, PowIRtab™ Bulk Obsolete Standard 200 V 150A 1.13 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 50 µA @ 200 V - - - Chassis Mount PowIRtab™ -55°C ~ 175°C
JANTXV1N4148-1 MACOM Technology Solutions

JANTXV1N4148-1

DIODE GEN PURP 75V 200MA DO35

MACOM Technology Solutions

6,068
Datasheet - DO-204AH, DO-35, Axial Bulk Discontinued at Digi-Key Standard 75 V 200mA 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V - Military MIL-PRF-19500/116 Through Hole DO-35 -65°C ~ 200°C
JAN1N4247/TR Microchip Technology

JAN1N4247/TR

DIODE GEN PURP 600V 1A

Microchip Technology

2,020
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
GB05MPS17-247 GeneSiC Semiconductor

GB05MPS17-247

DIODE SIL CARB 1.7KV 25A TO247-2

GeneSiC Semiconductor

5,897
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 25A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 6 µA @ 1700 V 334pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
JAN1N5622 Microchip Technology

JAN1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

5,427
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6642US Microchip Technology

JAN1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

7,444
Datasheet - SQ-MELF, D Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 40pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5552/TR Microchip Technology

1N5552/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

2,938
Datasheet - B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5805 Microchip Technology

1N5805

DIODE GEN PURP 125V 1A AXIAL

Microchip Technology

6,361
Datasheet - A, Axial Bulk Discontinued at Digi-Key Standard 125 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 125°C
DSA9-12F IXYS

DSA9-12F

DIODE AVAL 1.2KV 11A DO203AA

IXYS

4,990
Datasheet - DO-203AA, DO-4, Stud Box Obsolete Avalanche 1200 V 11A 1.4 V @ 36 A Standard Recovery >500ns, > 200mA (Io) - 3 mA @ 1200 V - - - Chassis, Stud Mount DO-203AA -40°C ~ 180°C
APT100D60BG Microchip Technology

APT100D60BG

DIODE GEN PURP 600V 100A TO247

Microchip Technology

3,867
Datasheet - TO-247-2 Bulk Active Standard 600 V 100A 2 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 250 µA @ 600 V - - - Through Hole TO-247 -55°C ~ 150°C
GC15MPS12-247 GeneSiC Semiconductor

GC15MPS12-247

DIODE SIL CARB 1.2KV 75A TO247-2

GeneSiC Semiconductor

2,366
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 75A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 14 µA @ 1200 V 1089pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5551 Microchip Technology

1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,230
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5711-1/TR Microchip Technology

JAN1N5711-1/TR

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

6,050
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 70 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5803E3 Microchip Technology

1N5803E3

DIODE GEN PURP 80V 1A AXIAL

Microchip Technology

9,564
Datasheet - Axial Bulk Active Standard 80 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole Axial -65°C ~ 175°C
1N5622/TR Microchip Technology

1N5622/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,669
Datasheet - A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - - - Through Hole A, Axial -65°C ~ 200°C
VS-95PF140 Vishay General Semiconductor - Diodes Division

VS-95PF140

DIODE GEN PURP 1.4KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

3,652
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
STPSC806G-TR STMicroelectronics

STPSC806G-TR

DIODE SIL CARBIDE 600V 8A D2PAK

STMicroelectronics

5,255
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 450pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
CDLL1A80 Microchip Technology

CDLL1A80

DIODE SCHOTTKY 80V 1A DO213AB

Microchip Technology

5,320
Datasheet - DO-213AB, MELF Bulk Active Schottky 80 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 80 V - - - Surface Mount DO-213AB -
JANTX1N5620/TR Microchip Technology

JANTX1N5620/TR

DIODE GEN PURP 800V 1A

Microchip Technology

8,837
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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