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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S25M GeneSiC Semiconductor

S25M

DIODE GEN PURP 1KV 25A DO203AA

GeneSiC Semiconductor

6,530
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1000 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25MR GeneSiC Semiconductor

S25MR

DIODE GEN PURP 1KV 25A DO220AA

GeneSiC Semiconductor

7,691
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1000 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25Q GeneSiC Semiconductor

S25Q

DIODE GEN PURP 1.2KV 25A DO203AA

GeneSiC Semiconductor

8,868
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1200 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25QR GeneSiC Semiconductor

S25QR

DIODE GEN PURP 1.2KV 25A DO220AA

GeneSiC Semiconductor

3,266
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1200 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
BYT30P-1000 STMicroelectronics

BYT30P-1000

DIODE GEN PURP 1KV 30A SOD93-2

STMicroelectronics

3,725
Datasheet - SOD-93-2 Tube Obsolete Standard 1000 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 165 ns 100 µA @ 1000 V - - - Through Hole SOD-93-2 -40°C ~ 150°C
VS-80PF160W Vishay General Semiconductor - Diodes Division

VS-80PF160W

DIODE GEN PURP 1.6KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

6,828
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 80A 1.46 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 150°C
1N4942 Microchip Technology

1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

4,966
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5806/TR Microchip Technology

JAN1N5806/TR

DIODE GEN PURP 150V 2.5A

Microchip Technology

2,346
Datasheet - A, Axial Tape & Reel (TR) Active Standard 150 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5417/TR Microchip Technology

1N5417/TR

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

2,832
Datasheet - Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
1N4942-1 Microchip Technology

1N4942-1

DIODE GEN PURP 200V 1A

Microchip Technology

5,122
Datasheet - Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole - -65°C ~ 175°C
VS-95PF40 Vishay General Semiconductor - Diodes Division

VS-95PF40

DIODE GEN PURP 400V 95A DO203AB

Vishay General Semiconductor - Diodes Division

7,115
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-95PFR40 Vishay General Semiconductor - Diodes Division

VS-95PFR40

DIODE GP REV 400V 95A DO203AB

Vishay General Semiconductor - Diodes Division

2,212
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
1N3613 Microchip Technology

1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3,712
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N3611/TR Microchip Technology

JANTX1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

9,926
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
1N3611E3/TR Microchip Technology

1N3611E3/TR

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

4,493
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
1N5615E3/TR Microchip Technology

1N5615E3/TR

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

6,687
Datasheet - Axial Tape & Reel (TR) Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
LSIC2SD065E16CCA Littelfuse Inc.

LSIC2SD065E16CCA

DIODE SIL CARB 650V 23A TO247AD

Littelfuse Inc.

9,958
Datasheet GEN2 TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 23A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 415pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
IDB10S60C Infineon Technologies

IDB10S60C

DIODE SIL CARB 600V 10A TO263-3

Infineon Technologies

3,731
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 600 V 480pF @ 1V, 1MHz - - Surface Mount PG-TO263-3-2 -55°C ~ 175°C
JAN1N4942/TR Microchip Technology

JAN1N4942/TR

DIODE GEN PURP 200V 1A

Microchip Technology

2,781
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
BAV45 Central Semiconductor Corp

BAV45

DIODE GEN PURP 20V 50MA TO18

Central Semiconductor Corp

8,712
Datasheet - TO-18-2 Bulk Obsolete Standard 20 V 50mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 600 ns 5 pA @ 5 V 1.3pF @ 0V, 1MHz - - Through Hole TO-18 -65°C ~ 125°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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