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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FR6D02 GeneSiC Semiconductor

FR6D02

DIODE GEN PURP 200V 6A DO4

GeneSiC Semiconductor

3,538
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR6G02 GeneSiC Semiconductor

FR6G02

DIODE GEN PURP 400V 6A DO4

GeneSiC Semiconductor

7,753
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR6G05 GeneSiC Semiconductor

FR6G05

DIODE GEN PURP 400V 16A DO4

GeneSiC Semiconductor

2,148
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 16A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR6J02 GeneSiC Semiconductor

FR6J02

DIODE GEN PURP 600V 6A DO4

GeneSiC Semiconductor

9,483
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR6J05 GeneSiC Semiconductor

FR6J05

DIODE GEN PURP 600V 6A DO4

GeneSiC Semiconductor

6,971
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
VS-80PF140W Vishay General Semiconductor - Diodes Division

VS-80PF140W

DIODE GEN PURP 1.4KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

4,409
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 80A 1.46 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 150°C
SDP06S60 Infineon Technologies

SDP06S60

DIODE SIL CARB 600V 6A TO220-3-1

Infineon Technologies

7,130
Datasheet - TO-220-3 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 300pF @ 0V, 1MHz - - Through Hole PG-TO220-3-1 -55°C ~ 175°C
VS-95PF120W Vishay General Semiconductor - Diodes Division

VS-95PF120W

DIODE GEN PURP 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

4,425
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-95PFR120W Vishay General Semiconductor - Diodes Division

VS-95PFR120W

DIODE GP REV 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

6,736
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
JAN1N5619 Microchip Technology

JAN1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

2,407
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 800 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N4245 Microchip Technology

JANTX1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

5,824
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
CD5818 Microchip Technology

CD5818

DIODE SCHOTTKY 30V 1A DIE

Microchip Technology

3,901
Datasheet - Die Tape & Reel (TR) Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
JANTX1N3600/TR Microchip Technology

JANTX1N3600/TR

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

8,033
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/231 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5620/TR Microchip Technology

1N5620/TR

DIODE GEN PURP 800V 1A

Microchip Technology

2,463
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Through Hole A, Axial -65°C ~ 200°C
1N5621/TR Microchip Technology

1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

2,215
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
SDT06S60 Infineon Technologies

SDT06S60

DIODE SIL CARB 600V 6A TO220-2-2

Infineon Technologies

9,690
Datasheet CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 300pF @ 0V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
VS-100BGQ100HF4 Vishay General Semiconductor - Diodes Division

VS-100BGQ100HF4

DIODE SCHOTTKY 30V 100A POWERTAB

Vishay General Semiconductor - Diodes Division

7,802
Datasheet - PowerTab® Tube Obsolete Schottky 30 V 100A 630 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 2.4 mA @ 30 V - Automotive AEC-Q101 Chassis Mount PowerTab® -55°C ~ 150°C
SCS215AEC Rohm Semiconductor

SCS215AEC

DIODE SIL CARBIDE 650V 15A TO247

Rohm Semiconductor

7,941
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz - - Through Hole TO-247 175°C (Max)
SCS215AGHRC Rohm Semiconductor

SCS215AGHRC

DIODE SIL CARB 650V 15A TO220AC

Rohm Semiconductor

6,299
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
G3S06504A Global Power Technology-GPT

G3S06504A

DIODE SIC 650V 11.5A TO220AC

Global Power Technology-GPT

13
Datasheet - TO-220-2 Cut Tape (CT) Active SiC (Silicon Carbide) Schottky 650 V 11.5A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 181pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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