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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-50PFR120 Vishay General Semiconductor - Diodes Division

VS-50PFR120

DIODE GP REV 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division

7,918
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 50A 1.4 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
SCS206AMC Rohm Semiconductor

SCS206AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

9,883
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
LSIC2SD120C05 Littelfuse Inc.

LSIC2SD120C05

DIODE SIC 1.2KV 18.1A TO252L

Littelfuse Inc.

7,658
Datasheet Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 18.1A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 310pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
1N5614/TR Microchip Technology

1N5614/TR

DIODE GEN PURP 200V 1A

Microchip Technology

6,641
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Through Hole A, Axial -65°C ~ 200°C
GKN26/04 GeneSiC Semiconductor

GKN26/04

DIODE GEN PURP 400V 25A DO4

GeneSiC Semiconductor

8,234
Datasheet - DO-203AA, DO-4, Stud Bulk Obsolete Standard 400 V 25A 1.55 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 4 mA @ 400 V - - - Chassis, Stud Mount DO-4 -40°C ~ 180°C
JAN1N3613 Microchip Technology

JAN1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3,247
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JAN1N3611/TR Microchip Technology

JAN1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

5,534
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
1N485A/TR Microchip Technology

1N485A/TR

DIODE GEN PURP 180V 100MA DO7

Microchip Technology

7,930
Datasheet - DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 180 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - - - Through Hole DO-7 -65°C ~ 175°C
1N485/TR Microchip Technology

1N485/TR

DIODE GEN PURP 180V 100MA DO7

Microchip Technology

5,048
Datasheet - DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 180 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - - - Through Hole DO-7 -65°C ~ 175°C
DSC10065 Diodes Incorporated

DSC10065

DIODE SIL CARB 650V 10A TO220AC

Diodes Incorporated

7,449
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 400pF @ 100mV, 1MHz - - Through Hole TO220AC (Type WX) -55°C ~ 175°C
VS-12FL60S05 Vishay General Semiconductor - Diodes Division

VS-12FL60S05

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,102
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-12FLR60S05 Vishay General Semiconductor - Diodes Division

VS-12FLR60S05

DIODE GP REV 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,163
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-60APU06HN3 Vishay General Semiconductor - Diodes Division

VS-60APU06HN3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

6,511
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AC -55°C ~ 175°C
VS-16FL20S02 Vishay General Semiconductor - Diodes Division

VS-16FL20S02

DIODE GEN PURP 200V 16A DO203AA

Vishay General Semiconductor - Diodes Division

2,066
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 16A 1.4 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 50 µA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
SCS306APC9 Rohm Semiconductor

SCS306APC9

DIODE SILICON CARBIDE 650V 6A

Rohm Semiconductor

4,796
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
VS-90APF06L-M3 Vishay General Semiconductor - Diodes Division

VS-90APF06L-M3

DIODE GEN PURP 600V 90A TO247AD

Vishay General Semiconductor - Diodes Division

7,783
Datasheet - TO-247-3 Tube Active Standard 600 V 90A 1.3 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-90EPF06L-M3 Vishay General Semiconductor - Diodes Division

VS-90EPF06L-M3

DIODE GEN PURP 600V 90A TO247AD

Vishay General Semiconductor - Diodes Division

6,529
Datasheet - TO-247-2 Tube Active Standard 600 V 90A 1.3 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N649UR-1/TR Microchip Technology

1N649UR-1/TR

DIODE GP 600V 400MA DO213AA

Microchip Technology

7,297
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - - - Surface Mount DO-213AA -65°C ~ 175°C
S16B GeneSiC Semiconductor

S16B

DIODE GEN PURP 100V 16A DO203AA

GeneSiC Semiconductor

6,898
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 16A 1.1 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S16BR GeneSiC Semiconductor

S16BR

DIODE GEN PURP 100V 16A DO220AA

GeneSiC Semiconductor

2,598
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 16A 1.1 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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