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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SPV1001N30 STMicroelectronics

SPV1001N30

DIODE GEN PURP 30V 12.5A 8PQFN

STMicroelectronics

6,147
Datasheet - 8-PowerVDFN Tape & Reel (TR) Obsolete Standard 30 V 12.5A 850 mV @ 5 A - - 1 µA @ 30 V - - - Surface Mount 8-PQFN (5x6) -45°C ~ 150°C
TSP15H120S S1G Taiwan Semiconductor Corporation

TSP15H120S S1G

DIODE SCHOTTKY 120V 15A TO277A

Taiwan Semiconductor Corporation

8,950
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Discontinued at Digi-Key Schottky 120 V 15A 750 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 120 V - - - Surface Mount TO-277A (SMPC) -55°C ~ 150°C
TSP15U120S S1G Taiwan Semiconductor Corporation

TSP15U120S S1G

DIODE SCHOTTKY 120V 15A TO277A

Taiwan Semiconductor Corporation

8,309
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 120 V 15A 750 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 120 V - - - Surface Mount TO-277A (SMPC) -55°C ~ 150°C
KSF30A40B KYOCERA AVX

KSF30A40B

DIODE GEN PURP 400V 30A TO247

KYOCERA AVX

4,695
Datasheet - TO-247-3 Tube Active Standard 400 V 30A 1.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 400 V - - - Through Hole TO-247 -40°C ~ 150°C
RBLQ20BGE10TL Rohm Semiconductor

RBLQ20BGE10TL

TRENCH MOS STRUCTURE, 100V, 20A,

Rohm Semiconductor

4,548
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Schottky 100 V 20A 860 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 100 V - - - Surface Mount TO-252GE 150°C
SZ-E10ET415 Sanken Electric USA Inc.

SZ-E10ET415

SCHOTTKY DIODE 150V/45A

Sanken Electric USA Inc.

6,658
Datasheet - DO-218AB Bulk Active Schottky 150 V 45A 1.1 V @ 45 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 150 V - - - Surface Mount DO-218AB -55°C ~ 150°C
STTH30R04PI STMicroelectronics

STTH30R04PI

DIODE GEN PURP 400V 30A DOP3I

STMicroelectronics

9,644
Datasheet - DOP3I-2 Insulated (Straight Leads) Tube Obsolete Standard 400 V 30A 1.45 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - - - Through Hole DOP3I -40°C ~ 175°C
STPS20SM60SG-TR STMicroelectronics

STPS20SM60SG-TR

DIODE SCHOTTKY 60V 20A D2PAK

STMicroelectronics

2,248
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 60 V 20A 630 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 85 µA @ 60 V - - - Surface Mount D2PAK 150°C (Max)
JANTX1N4150UR-1 Microchip Technology

JANTX1N4150UR-1

DIODE GEN PURP 50V 200MA DO213AA

Microchip Technology

4,308
Datasheet - DO-213AA Bulk Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/231 Surface Mount DO-213AA -65°C ~ 175°C
APT15D120BG Microchip Technology

APT15D120BG

DIODE GP 1.2KV 15A TO247

Microchip Technology

4,796
Datasheet - TO-247-2 Tube Active Standard 1200 V 15A 2.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 260 ns 250 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 150°C
SICAC1060P-TP Micro Commercial Co

SICAC1060P-TP

Interface

Micro Commercial Co

9,056
Datasheet - 8-PowerTDFN Bulk Last Time Buy SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 44 µA @ 650 V 452pF @ 0V, 1MHz - - Surface Mount DFN5060 -55°C ~ 175°C
SCS308AHGC9 Rohm Semiconductor

SCS308AHGC9

DIODE SIL CARB 650V 8A TO220ACP

Rohm Semiconductor

4,892
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
MBRM360-13-F Diodes Incorporated

MBRM360-13-F

DIODE SCHOTTKY 60V 3A POWERMITE3

Diodes Incorporated

3,291
Datasheet - Powermite®3 Tape & Reel (TR) Obsolete Schottky 60 V 3A 630 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 60 V 130pF @ 4V, 1MHz - - Surface Mount Powermite 3 -55°C ~ 125°C
JAN1N3595A-1/TR Microchip Technology

JAN1N3595A-1/TR

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

7,783
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N3595-1/TR Microchip Technology

JAN1N3595-1/TR

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

3,041
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
IDV05S60CXKSA1 Infineon Technologies

IDV05S60CXKSA1

DIODE SIL CARB 600V 5A TO220FP

Infineon Technologies

5,855
Datasheet CoolSiC™+ TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2 Full Pack -55°C ~ 175°C
HFA08PB60 Vishay General Semiconductor - Diodes Division

HFA08PB60

DIODE GP 600V 8A TO247AC

Vishay General Semiconductor - Diodes Division

2,155
Datasheet - TO-247-2 Tube Obsolete Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
VS-30CPF10PBF Vishay General Semiconductor - Diodes Division

VS-30CPF10PBF

DIODE GEN PURP 1KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

7,208
Datasheet - TO-247-3 Tube Obsolete Standard 1000 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1000 V - - - Through Hole TO-247AC -40°C ~ 150°C
KSF30A20B KYOCERA AVX

KSF30A20B

DIODE GEN PURP 200V 30A TO247

KYOCERA AVX

3,577
Datasheet - TO-247-3 Tube Active Standard 200 V 30A 980 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 25 µA @ 200 V - - - Through Hole TO-247 -40°C ~ 150°C
CDLL1A20 Microchip Technology

CDLL1A20

DIODE SCHOTTKY 20V 1A DO213AB

Microchip Technology

2,262
Datasheet - DO-213AB, MELF Bulk Active Schottky 20 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V 0.9pF @ 5V, 1MHz - - Surface Mount DO-213AB -
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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