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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-8ETX06STRR-M3 Vishay General Semiconductor - Diodes Division

VS-8ETX06STRR-M3

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,318
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 8A 3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 24 ns 50 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
GPA803H Taiwan Semiconductor Corporation

GPA803H

8A, 200V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,096
Datasheet - TO-220-2 Tube Active Standard 200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA804H Taiwan Semiconductor Corporation

GPA804H

8A, 400V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

8,526
Datasheet - TO-220-2 Tube Active Standard 400 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA803 Taiwan Semiconductor Corporation

GPA803

8A, 200V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,344
Datasheet - TO-220-2 Tube Active Standard 200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA802H Taiwan Semiconductor Corporation

GPA802H

8A, 100V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

2,143
Datasheet - TO-220-2 Tube Active Standard 100 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA802 Taiwan Semiconductor Corporation

GPA802

8A, 100V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

3,681
Datasheet - TO-220-2 Tube Active Standard 100 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA801 Taiwan Semiconductor Corporation

GPA801

8A, 50V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

9,977
Datasheet - TO-220-2 Tube Active Standard 50 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA801H Taiwan Semiconductor Corporation

GPA801H

8A, 50V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,843
Datasheet - TO-220-2 Tube Active Standard 50 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
BYV29G-600,127 WeEn Semiconductors

BYV29G-600,127

DIODE GEN PURP 600V 9A I2PAK

WeEn Semiconductors

8,282
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active Standard 600 V 9A 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - - - Through Hole TO-262 (I2PAK) 150°C (Max)
BYV25FB-600,118 WeEn Semiconductors

BYV25FB-600,118

DIODE GEN PURP 600V 5A D2PAK

WeEn Semiconductors

8,885
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 5A 1.9 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - - - Surface Mount D2PAK 150°C (Max)
BYC10-600PQ WeEn Semiconductors

BYC10-600PQ

DIODE GEN PURP 600V 10A TO220AC

WeEn Semiconductors

9,577
Datasheet - TO-220-2 Tube Active Standard 600 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 19 ns - - - - Through Hole TO-220AC 150°C (Max)
BYC8-1200PQ WeEn Semiconductors

BYC8-1200PQ

DIODE GEN PURP 1.2KV 8A TO220AC

WeEn Semiconductors

3,231
Datasheet - TO-220-2 Bulk Active Standard 1200 V 8A 3.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 1200 V - - - Through Hole TO-220AC 175°C (Max)
V20K202-M3/I Vishay General Semiconductor - Diodes Division

V20K202-M3/I

DIODE SCHOTTKY 200V 3.2A FLATPAK

Vishay General Semiconductor - Diodes Division

9,425
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active Schottky 200 V 3.2A 1.02 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 200 V 800pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
V20K170-M3/I Vishay General Semiconductor - Diodes Division

V20K170-M3/I

DIODE SCHOTTKY 170V 3.2A FLATPAK

Vishay General Semiconductor - Diodes Division

3,430
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active Schottky 170 V 3.2A 1.02 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 170 V 800pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
AR3PDHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PDHM3_A/H

DIODE AVALANCHE 200V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2,879
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 200 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 200 V 44pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PGHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PGHM3_A/H

DIODE AVALANCHE 400V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2,105
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 400 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 200 V 44pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PJHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PJHM3_A/H

DIODE AVALANCHE 600V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

7,886
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V 44pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PKHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PKHM3_A/H

DIODE AVALANCHE 800V 1.6A TO277A

Vishay General Semiconductor - Diodes Division

7,117
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 1.6A 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 800 V 34pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PMHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PMHM3_A/H

DIODE AVALANCHE 1KV 1.6A TO277A

Vishay General Semiconductor - Diodes Division

9,929
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 1.6A 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 800 V 34pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU2PDHM3_A/H Vishay General Semiconductor - Diodes Division

AU2PDHM3_A/H

DIODE AVALANCHE 200V 1.6A TO277A

Vishay General Semiconductor - Diodes Division

2,294
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 200 V 1.6A 1.9 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 200 V 42pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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