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Single IGBTs

Explore Single IGBTs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RGTV60TK65DGVC11 Rohm Semiconductor

RGTV60TK65DGVC11

IGBT TRNCH FIELD 650V 33A TO3PFM

Rohm Semiconductor

9,285
Datasheet - TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 33 A 120 A 1.9V @ 15V, 30A 76 W 570µJ (on), 500µJ (off) Standard 64 nC 33ns/105ns 400V, 30A, 10Ohm, 15V 95 ns -40°C ~ 175°C (TJ) - - Through Hole TO-3PFM
RGW00TS65DGC11 Rohm Semiconductor

RGW00TS65DGC11

IGBT TRNCH FIELD 650V 96A TO247N

Rohm Semiconductor

2,940
Datasheet - TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 96 A 200 A 1.9V @ 15V, 50A 254 W 1.18mJ (on), 960µJ (off) Standard 141 nC 52ns/180ns 400V, 50A, 10Ohm, 15V 95 ns -40°C ~ 175°C (TJ) - - Through Hole TO-247N
RGS80TS65HRC11 Rohm Semiconductor

RGS80TS65HRC11

IGBT TRNCH FIELD 650V 73A TO247N

Rohm Semiconductor

8,846
Datasheet - TO-247-3 Tube Active Trench Field Stop 650 V 73 A 120 A 2.1V @ 15V, 40A 272 W 1.05mJ (on), 1.03mJ (off) Standard 48 nC 37ns/112ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole TO-247N
IXGH25N160 IXYS

IXGH25N160

IGBT NPT 1600V 75A TO247AD

IXYS

9,409
Datasheet - TO-247-3 Tube Active NPT 1600 V 75 A 200 A 4.7V @ 20V, 100A 300 W - Standard 84 nC - - - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
AIKW75N60CTXKSA1 Infineon Technologies

AIKW75N60CTXKSA1

IC DISCRETE 600V TO247-3

Infineon Technologies

2,509
Datasheet TrenchStop™ TO-247-3 Tube Active Trench Field Stop 600 V 80 A 225 A 2V @ 15V, 75A 428 W 2mJ (on), 2.5mJ (off) Standard 470 nC 33ns/330ns 400V, 75A, 5Ohm, 15V - -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
APT68GA60B Microchip Technology

APT68GA60B

IGBT PT 600V 121A TO247

Microchip Technology

1
Datasheet POWER MOS 8™ TO-247-3 Tube Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 298 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
IGW75N60H3FKSA1 Infineon Technologies

IGW75N60H3FKSA1

IGBT TRENCH FS 600V 140A TO247-3

Infineon Technologies

22
Datasheet TrenchStop® TO-247-3 Tube Active Trench Field Stop 600 V 140 A 225 A 2.3V @ 15V, 75A 428 W 3mJ (on), 1.7mJ (off) Standard 470 nC 31ns/265ns 400V, 75A, 5.2Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole PG-TO247-3
RGTV00TS65DGC11 Rohm Semiconductor

RGTV00TS65DGC11

IGBT TRNCH FIELD 650V 95A TO247N

Rohm Semiconductor

6,320
Datasheet - TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 95 A 200 A 1.9V @ 15V, 50A 276 W 1.17mJ (on), 940µJ (off) Standard 104 nC 41ns/142ns 400V, 50A, 10Ohm, 15V 102 ns -40°C ~ 175°C (TJ) - - Through Hole TO-247N
RGS00TS65HRC11 Rohm Semiconductor

RGS00TS65HRC11

IGBT TRNCH FIELD 650V 88A TO247N

Rohm Semiconductor

6,074
Datasheet - TO-247-3 Tube Active Trench Field Stop 650 V 88 A 150 A 2.1V @ 15V, 50A 326 W 1.46mJ (on), 1.29mJ (off) Standard 58 nC 36ns/115ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole TO-247N
IXYH90N65A5 IXYS

IXYH90N65A5

IGBT PT 650V 220A TO247

IXYS

9,410
Datasheet XPT™, GenX5™ TO-247-3 Tube Active PT 650 V 220 A 600 A 1.35V @ 15V, 60A 650 W 1.3mJ (on), 3.4mJ (off) Standard 260 nC 40ns/420ns 400V, 50A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
IXYH30N170C IXYS

IXYH30N170C

1700V/108A HIGH VOLTAGE XPT IGB

IXYS

2,826
Datasheet XPT™ TO-247-3 Tube Active - 1700 V 108 A 255 A 3.7V @ 15V, 30A 937 W 5.9mJ (on), 3.3mJ (off) Standard 140 nC 28ns/150ns 850V, 30A, 10Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
IXYH24N90C3D1 IXYS

IXYH24N90C3D1

IGBT 900V 44A 200W C3 TO-247

IXYS

1
Datasheet GenX3™, XPT™ TO-247-3 Tube Active - 900 V 44 A 105 A 2.7V @ 15V, 24A 200 W 1.35mJ (on), 400µJ (off) Standard 40 nC 20ns/73ns 450V, 24A, 10Ohm, 15V 340 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
APT35GN120SG Microchip Technology

APT35GN120SG

IGBT NPT FS 1200V 94A D3PAK

Microchip Technology

23
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active NPT, Trench Field Stop 1200 V 94 A 105 A 2.1V @ 15V, 35A 379 W -, 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT80GA60B Microchip Technology

APT80GA60B

IGBT PT 600V 143A TO247

Microchip Technology

7,903
Datasheet - TO-247-3 Tube Active PT 600 V 143 A 240 A 2.5V @ 15V, 47A 625 W 840µJ (on), 751µJ (off) Standard 230 nC 23ns/158ns 400V, 47A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
IXGH6N170 IXYS

IXGH6N170

IGBT 1700V 12A 75W TO247

IXYS

5,038
Datasheet - TO-247-3 Tube Active NPT 1700 V 12 A 24 A 4V @ 15V, 6A 75 W 1.5mJ (off) Standard 20 nC 40ns/250ns 1360V, 6A, 33Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
IXGH40N120B2D1 IXYS

IXGH40N120B2D1

IGBT 1200V 75A 380W TO247

IXYS

7,481
Datasheet - TO-247-3 Tube Active PT 1200 V 75 A 200 A 3.5V @ 15V, 40A 380 W 4.5mJ (on), 3mJ (off) Standard 138 nC 21ns/290ns 960V, 40A, 2Ohm, 15V 100 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
IXGH30N120B3D1 IXYS

IXGH30N120B3D1

IGBT 1200V 300W TO247AD

IXYS

2
Datasheet GenX3™ TO-247-3 Tube Active PT 1200 V - 150 A 3.5V @ 15V, 30A 300 W 3.47mJ (on), 2.16mJ (off) Standard 87 nC 16ns/127ns 960V, 30A, 5Ohm, 15V 100 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT50GN120B2G Microchip Technology

APT50GN120B2G

IGBT NPT FIELD STOP 1200V 134A

Microchip Technology

4,291
Datasheet - TO-247-3 Variant Tube Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
IXBT16N170A IXYS

IXBT16N170A

IGBT 1700V 16A TO268AA

IXYS

5,011
Datasheet BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 1.2mJ (off) Standard 65 nC 15ns/160ns 1360V, 10A, 10Ohm, 15V 360 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
APT64GA90B2D30 Microchip Technology

APT64GA90B2D30

IGBT PT 900V 117A TO247

Microchip Technology

2
Datasheet POWER MOS 8™ TO-247-3 Variant Tube Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1192µJ (on), 1088µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
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FAQ

Frequently Asked Questions

What are Single IGBTs components used for?

Single IGBTs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single IGBTs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single IGBTs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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