FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FBG04N30BC GAN FET HEMT 40V30A COTS 4FSMD-B EPC Space, LLC	141	RFQ	Datasheet	FSMD-B	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	30A (Tc)	5V	9mOhm @ 30A, 5V	2.5V @ 9mA	11.4 nC @ 5 V	+6V, -4V	1300 pF @ 20 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
EPC7003AC GAN FET HEMT 100V 5A COTS 4UB EPC Space, LLC	138	RFQ	Datasheet	-	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	10A (Tc)	10V	42mOhm @ 10A, 5V	2.5V @ 1.4mA	1.5 nC @ 5 V	+6V, -4V	168 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
FBG30N04CC GAN FET HEMT 300V4A COTS 4FSMD-C EPC Space, LLC	165	RFQ	Datasheet	-	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	300 V	4A (Tc)	5V	404mOhm @ 4A, 5V	2.8V @ 600µA	2.6 nC @ 5 V	+6V, -4V	450 pF @ 150 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
FBG20N18BSH GAN FET HEMT 200V 18A 4FSMD-B EPC Space, LLC	47	RFQ	Datasheet	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	18A (Tc)	5V	28mOhm @ 18A, 5V	2.5V @ 3mA	7 nC @ 5 V	+6V, -4V	900 pF @ 100 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
FBG10N30BSH GAN FET HEMT 100V 30A 4FSMD-B EPC Space, LLC	40	RFQ	Datasheet	eGaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	30A (Tc)	5V	12mOhm @ 30A, 5V	2.5V @ 5mA	11 nC @ 5 V	+6V, -4V	1000 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
CDA04N30X1C GANFET 40V 30A .004 OHM 4DAPT EPC Space, LLC	88	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CDA10N30X1C GANFET 100V 30A .009 OHM 4DAPT EPC Space, LLC	100	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CDA10N05X2C GANFET 100V 5A .030 OHM 4DAPT EPC Space, LLC	100	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CDA20N18X3C GANFET 200V 18A .025 OHM 4DAPT EPC Space, LLC	64	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EPC7004BC GAN FET HEMT100V30A COTS 4FSMD-B EPC Space, LLC	41	RFQ	Datasheet	-	4-SMD, No Lead	Tray	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	30A (Tc)	5V	13mOhm @ 30A, 5V	2.5V @ 7mA	7 nC @ 5 V	+6V, -4V	797 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.