FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFR200N10P MOSFET N-CH 100V 133A ISOPLUS247 Littelfuse Inc.	8	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	133A (Tc)	10V	9mOhm @ 100A, 10V	5V @ 8mA	235 nC @ 10 V	±20V	7600 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	ISOPLUS247™
IXFQ140N20X3 MOSFET N-CH 200V 140A TO3P Littelfuse Inc.	28	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	140A (Tc)	10V	9.6mOhm @ 70A, 10V	4.5V @ 4mA	127 nC @ 10 V	±20V	7660 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
TK040Z65Z,S1F MOSFET N-CH 650V 57A TO247-4L Toshiba Semiconductor and Storage	22	RFQ	Datasheet	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	57A (Ta)	10V	40mOhm @ 28.5A, 10V	4V @ 2.85mA	105 nC @ 10 V	±30V	6250 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
IXFH170N10P MOSFET N-CH 100V 170A TO247AD Littelfuse Inc.	85	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	9mOhm @ 500mA, 10V	5V @ 4mA	198 nC @ 10 V	±20V	6000 pF @ 25 V	-	715W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
APT6029BLLG MOSFET N-CH 600V 21A TO247 Microchip Technology	63	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	-	290mOhm @ 10.5A, 10V	5V @ 1mA	65 nC @ 10 V	-	2615 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXFH140N20X3 MOSFET N-CH 200V 140A TO247 Littelfuse Inc.	16	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	140A (Tc)	10V	9.6mOhm @ 70A, 10V	4.5V @ 4mA	127 nC @ 10 V	±20V	7660 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFT140N20X3HV MOSFET N-CH 200V 140A TO268HV Littelfuse Inc.	17	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	140A (Tc)	10V	9.6mOhm @ 70A, 10V	4.5V @ 4mA	127 nC @ 10 V	±20V	7660 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
APT34M60S MOSFET N-CH 600V 36A D3PAK Microchip Technology	46	RFQ	Datasheet	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	190mOhm @ 17A, 10V	5V @ 1mA	165 nC @ 10 V	±30V	6640 pF @ 25 V	-	624W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
R6042JNZ4C13 MOSFET N-CH 600V 42A TO247G Rohm Semiconductor	96	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	42A (Tc)	15V	104mOhm @ 21A, 15V	7V @ 5.5mA	100 nC @ 15 V	±30V	3500 pF @ 100 V	-	495W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247G
IXTK102N30P MOSFET N-CH 300V 102A TO264 Littelfuse Inc.	36	RFQ	Datasheet	Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	102A (Tc)	10V	33mOhm @ 500mA, 10V	5V @ 500µA	224 nC @ 10 V	±20V	7500 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)
STWA75N65DM6 N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics	14	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	36mOhm @ 37.5A, 10V	4.75V @ 250µA	118 nC @ 10 V	±25V	5700 pF @ 100 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads
IXFX80N50P MOSFET N-CH 500V 80A PLUS247-3 IXYS	30	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	80A (Tc)	10V	65mOhm @ 40A, 10V	5V @ 8mA	197 nC @ 10 V	±30V	12700 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
IXTK140N30P MOSFET N-CH 300V 140A TO264 IXYS	14	RFQ	Datasheet	Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	140A (Tc)	10V	24mOhm @ 70A, 10V	5V @ 500µA	185 nC @ 10 V	±20V	14800 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 (IXTK)
IXFT180N20X3HV MOSFET N-CH 200V 180A TO268HV Littelfuse Inc.	29	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	180A (Tc)	10V	7.5mOhm @ 90A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10300 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
APT5010LLLG MOSFET N-CH 500V 46A TO264 Microchip Technology	30	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	46A (Tc)	10V	100mOhm @ 23A, 10V	5V @ 2.5mA	95 nC @ 10 V	±30V	4360 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT5010B2FLLG MOSFET N-CH 500V 46A T-MAX Microchip Technology	40	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	46A (Tc)	10V	100mOhm @ 23A, 10V	5V @ 2.5mA	95 nC @ 10 V	±30V	4360 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT5010LFLLG MOSFET N-CH 500V 46A TO264 Microchip Technology	43	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	46A (Tc)	10V	100mOhm @ 23A, 10V	5V @ 2.5mA	95 nC @ 10 V	±30V	4360 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
IXFH150N20T MOSFET N-CH 200V 150A TO247AD Littelfuse Inc.	22	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	150A (Tc)	10V	15mOhm @ 75A, 10V	5V @ 4mA	177 nC @ 10 V	±20V	11700 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
TP65H050WSQA GANFET N-CH 650V 36A TO247-3 Transphorm	21	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	36A (Tc)	10V	60mOhm @ 25A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
IXFX48N60Q3 MOSFET N-CH 600V 48A PLUS247-3 IXYS	38	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	140mOhm @ 24A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	7020 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.