FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NP110N055PUJ-E1B-AYNP110N055PUJ-E1B-AY - SWITCHINGN |
1,000 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 14250 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | - | - | Surface Mount | TO-263-3 |
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QS1700SCM81700v 8AMP SiC Mosfet |
2,500 |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 8A | 20V | 100mOhm @ 2A, 20V | 4V @ 10mA | 16 nC @ 1200 V | - | 142 pF @ 1000 V | - | 88W | -55°C ~ 175°C | Automotive | - | Through Hole | PG-TO247-3 |
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RJL5014DPP-E0#T2RJL5014DPP-E0#T2 - SILICON N CHA |
2,240 |
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Datasheet | - | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Ta) | 10V | 400mOhm @ 9.5A, 10V | 4V @ 1mA | 43 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
|
AUIRF1404AUIRF1404 - 20V-40V N-CHANNEL AU |
24,709 |
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Datasheet | HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF1404AUIRF1404 - 20V-40V N-CHANNEL AU |
9,000 |
|
Datasheet | HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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GC041N65QFMOSFET N-CH 650V 70A TO-247 |
3,000 |
|
Datasheet | - | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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AC3M0045065DSIC MOSFET N-CH 650V 50A TO247-3 |
10,000 |
|
Datasheet | * | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0045065KSIC MOSFET N-CH 650V 50A TO247-4 |
10,000 |
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Datasheet | * | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0040120KSIC MOSFET N-CH 1200V 67A TO247- |
10,000 |
|
Datasheet | * | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC2M0040120DSIC MOSFET N-CH 1200V 57A TO247- |
10,000 |
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Datasheet | * | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | - | +25V, -10V | - | - | 278W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0040120DSIC MOSFET N-CH 1200V 67A TO247- |
10,000 |
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Datasheet | * | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0032120DSIC MOSFET N-CH 1200V 64A TO247- |
10,000 |
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Datasheet | * | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0065090DSIC MOSFET N-CH 900V 37A TO247-3 |
10,000 |
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Datasheet | * | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 37A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 125W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0065100KSIC MOSFET N-CH 1000V 33A TO247- |
10,000 |
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Datasheet | * | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 33A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 113.5W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-4 |
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AC3M0032120KSIC MOSFET N-CH 1200V 64A TO247- |
10,000 |
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Datasheet | * | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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FL06100GSICFET N-CH 650V 22A PDFN8x8 |
300 |
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Datasheet | Lightning | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 22A (Tc) | 15V | 100mOhm @ 10A, 15V | 1.5V @ 14mA | 51 nC @ 12 V | 15V | 1129 pF @ 400 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PDFN (8x8) |
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FF06100FASICFET N-CH 650V 23.5A TOLL |
300 |
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Datasheet | Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 23.5A (Tc) | 18V | 100mOhm @ 10A, 18V | 2.5V @ 14mA | 43 nC @ 15 V | 18V | 1000 pF @ 400 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
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FF06100J-7SICFET N-CH 650V 20.6A TO-263-7L |
300 |
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Datasheet | Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20.6A (Tc) | 18V | 100mOhm @ 10A, 18V | 2.2V @ 14mA | 43 nC @ 15 V | 18V | 1000 pF @ 400 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
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QS120SCM80D2P1200V N-CHANNEL SIC MOSFET 80 M |
1,000 |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.8V @ 5mA | 60 nC @ 20 V | +25V, -10V | 1001 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
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FCH041N65F-F085MOSFET N-CH 650V 76A TO247-3 |
163 |
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Datasheet | SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | ±20V | 13566 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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