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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
DMWSH120H90SM3Q Diodes Incorporated

DMWSH120H90SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

2,149
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 97.5mOhm @ 20A, 15V 3.5V @ 5mA 50.9 nC @ 15 V +19V, -8V 1090 pF @ 1000 V - 246W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
DMWSH120H43SM3 Diodes Incorporated

DMWSH120H43SM3

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

6,863
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72.7A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 105 nC @ 15 V +19V, -8V 2187 pF @ 1000 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H43SM4 Diodes Incorporated

DMWSH120H43SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

2,860
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 72.7A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 105 nC @ 15 V +19V, -8V 2187 pF @ 1000 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DMWSH120H28SM3 Diodes Incorporated

DMWSH120H28SM3

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

3,166
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H28SM4 Diodes Incorporated

DMWSH120H28SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

3,947
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 173.7 nC @ 15 V +19V, -8V 3944 pF @ 1000 V - 429W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DMWSH120H28SM3Q Diodes Incorporated

DMWSH120H28SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

9,774
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
DMN2992UFA-7B Diodes Incorporated

DMN2992UFA-7B

MOSTFET N-CH 20V 520MA X2DFN0806

Diodes Incorporated

5,816
Datasheet - 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 520mA (Ta) 1.5V, 4.5V 990mOhm @ 100mA, 4.5V 1V @ 250µA 410 pC @ 10 V ±8V 15.6 pF @ 16 V - 410mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN0806-3
DMP31D1U-13 Diodes Incorporated

DMP31D1U-13

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

6,559
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 620mA (Ta) 1.8V, 4.5V 1Ohm @ 400mA, 4.5V 1.1V @ 250µA 1.6 nC @ 8 V ±8V 54 pF @ 15 V - 460mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
DMN67D8L-13 Diodes Incorporated

DMN67D8L-13

MOSFET N-CH 60V 210MA SOT23

Diodes Incorporated

9,408
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 210mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.82 nC @ 10 V ±30V 22 pF @ 25 V - 340mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
DMP22D5UFA-7B Diodes Incorporated

DMP22D5UFA-7B

MOSFET BVDSS: 8V~24V X2-DFN0806-

Diodes Incorporated

4,323
Datasheet - 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 360mA (Ta) 1.8V, 4.5V 1.9Ohm @ 100mA, 4.5V 1V @ 250µA 0.3 nC @ 4.5 V ±8V 17 pF @ 16 V - 370mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN0806-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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Need Help Narrowing Down the Right FETs, MOSFETs Part?

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