FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
UPA1740TP-E1-AZ UPA1740TP-E1-AZ - MOS FIELD EFFE Renesas	155,000	RFQ	Datasheet	-	8-PowerSOIC (0.173", 4.40mm Width)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7A (Tc)	10V	440mOhm @ 3.5A, 10V	4.5V @ 1mA	12 nC @ 10 V	±30V	420 pF @ 10 V	-	1W (Ta), 22W (Tc)	150°C	-	-	Surface Mount	8-HSOP
PSMN4R3-80PS,127 NEXPERIA PSMN4R3-80PS - 120A, 80 NXP Semiconductors	1,756	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	4.3mOhm @ 25A, 10V	4V @ 1mA	111 nC @ 10 V	±20V	8161 pF @ 40 V	-	306W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AUIRL1404Z MOSFET N-CH 40V 160A TO220 International Rectifier	10,859	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	4.5V, 10V	3.1mOhm @ 75A, 10V	2.7V @ 250µA	110 nC @ 5 V	±16V	5080 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
AM7482N MOSFET N-CH 80V 18A DFN5X6 Analog Power Inc.	3,500	RFQ	Datasheet	-	8-PowerVDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	18A (Ta)	4.5V, 10V	11mOhm @ 14.4A, 10V	1V @ 250µA	72 nC @ 4.5 V	±20V	4021 pF @ 15 V	-	5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
BUK7107-55AIE,118 NEXPERIA BUK7107 - N-CHANNEL TRE NXP Semiconductors	2,400	RFQ	Datasheet	TrenchMOS™	TO-263-5, D2PAK (4 Leads + Tab), TO-263BB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	7mOhm @ 50A, 10V	4V @ 1mA	116 nC @ 10 V	±20V	4500 pF @ 25 V	Current Sensing	272W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
HUF75542P3 POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	1,690	RFQ	Datasheet	UltraFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	75A (Tc)	10V	14mOhm @ 75A, 10V	4V @ 250µA	180 nC @ 20 V	±20V	2750 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
FCP11N60N POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	800	RFQ	Datasheet	SupreMOS™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10.8A (Tc)	10V	299mOhm @ 5.4A, 10V	4V @ 250µA	35.6 nC @ 10 V	±30V	1505 pF @ 100 V	-	94W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
UPA2702TP-E2-AZ UPA2702 - N CHANNEL MOSFET Renesas	5,000	RFQ	Datasheet	-	8-PowerSOIC (0.173", 4.40mm Width)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	14A (Ta), 35A (Tc)	4V, 10V	9.5mOhm @ 7A, 10V	2.5V @ 1mA	9 nC @ 5 V	±20V	900 pF @ 10 V	-	3W (Ta), 22W (Tc)	150°C	-	-	Surface Mount	8-HSOP
TO220FMD12N65F MOSFET TO-220F N 650V 12A NextGen Components	6,750	RFQ	Datasheet	TO-220F	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	0.8Ohm @ 6A, 10V	-	41.9 nC @ 10 V	±30V	-	-	-	-	-	-	-	-
UPA2782GR-E1-A UPA2782GR-E1-A - SWITCHINGN-CHAN Renesas	7,500	RFQ	Datasheet	-	8-SOIC (0.173", 4.40mm Width)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	4V, 10V	15mOhm @ 5.5A, 10V	2.5V @ 1mA	7.1 nC @ 5 V	±20V	660 pF @ 10 V	-	2W (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP
IRFSL7537PBF MOSFET N-CH 60V 173A TO262 International Rectifier	800	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	173A (Tc)	6V, 10V	3.3mOhm @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	7020 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
FDA18N50 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	1,564	RFQ	Datasheet	UniFET™	TO-3P-3, SC-65-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	19A (Tc)	10V	265mOhm @ 9.5A, 10V	5V @ 250µA	60 nC @ 10 V	±30V	2860 pF @ 25 V	-	239W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN
BSC0588NSIATMA1 BSC0588- N-CHANNEL POWER MOSFET Infineon Technologies	215,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF3703PBF IRF3703 - 12V-300V N-CHANNEL POW International Rectifier	15,791	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	210A (Tc)	7V, 10V	2.8mOhm @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	8250 pF @ 25 V	-	3.8W (Ta), 230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AMIB075N15N3 MOSFET N-CH 150V 90A TO-263 Analog Power Inc.	250	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	90A (Tc)	6.5V, 10V	10mOhm @ 20A, 10V	2V @ 250µA	55 nC @ 6.5 V	±20V	4329 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263
FQP12N60C POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	4,340	RFQ	Datasheet	QFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	650mOhm @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±30V	2290 pF @ 25 V	-	225W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRF2907ZPBF IRF2907 - 12V-300V N-CHANNEL POW International Rectifier	18,857	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFSL7730PBF IRFSL7730 - 12V-300V N-CHANNEL P International Rectifier	899	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	195A (Tc)	6V, 10V	2.6mOhm @ 100A, 10V	3.7V @ 250µA	407 nC @ 10 V	±20V	13660 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
AUIRL7736M2TR MOSFET N-CH 40V 179A DIRECTFET International Rectifier	13,183	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric M4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	179A (Tc)	4.5V, 10V	3mOhm @ 67A, 10V	2.5V @ 150µA	78 nC @ 4.5 V	±16V	5055 pF @ 25 V	-	2.5W (Ta), 63W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric M4
NP34N055SLE-E1-AY NP34N055 - POWER FIELD-EFFECT TR Renesas	5,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	34A (Ta)	4.5V, 10V	18mOhm @ 17A, 10V	2.5V @ 250µA	72 nC @ 10 V	±20V	3000 pF @ 25 V	-	1.2W (Ta), 88W (Tc)	175°C	-	-	Surface Mount	TO-252 (MP-3ZK)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.