FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AUIRFU8401 MOSFET N-CH 40V 100A I-PAK International Rectifier	8,142	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	4.25mOhm @ 60A, 10V	3.9V @ 500µA	63 nC @ 10 V	±20V	2200 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
AM4934N MOSFET N-CH 30V 8.9A SO-8 Analog Power Inc.	4,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AM30N06-39D MOSFET N-CH 60V 30A TO-252 Analog Power Inc.	1,800	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	30A (Tc)	4.5V, 10V	38mOhm @ 30A, 10V	1V @ 250µA	16.5 nC @ 4.5 V	±20V	1711 pF @ 15 V	-	50W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252
IPA60R600CPXKSA1 IPA60R600 - 600V COOLMOS N-CHANN Infineon Technologies	8,500	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.1A (Tc)	10V	600mOhm @ 3.3A, 10V	3.5V @ 220µA	27 nC @ 10 V	±20V	550 pF @ 100 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
HAT1044M-EL-E HAT1044M-EL-E - SILICON P CHANNE Renesas	1,808	RFQ	Datasheet	-	SOT-23-6 Thin, TSOT-23-6	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	4.5A (Ta)	4.5V, 10V	60mOhm @ 3A, 10V	2.5V @ 1mA	13 nC @ 10 V	±20V	600 pF @ 10 V	-	1.05W (Ta)	150°C	-	-	Surface Mount	6-TSOP
FDMC8854 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	1,100	RFQ	Datasheet	PowerTrench®	8-PowerWDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	15A (Tc)	4.5V, 10V	5.7mOhm @ 15A, 10V	3V @ 250µA	57 nC @ 10 V	±20V	3405 pF @ 10 V	-	2W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-MLP (3.3x3.3)
GT045N10D5 MOSFET N-CH 100V 120A 180W 5.0m Goford Semiconductor	10,000	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	5mOhm @ 30A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	4217 pF @ 50 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G900P15M MOSFET P-CH 150V 35A TO-263 Goford Semiconductor	8,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	80mOhm @ -5A, -10V	4V @ 250µA	27 nC @ -10 V	±20V	4056 pF @ -75 V	-	198W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
FQPF2N70 MOSFET N-CH 700V 2A TO220F Fairchild Semiconductor	42,241	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	700 V	2A (Tc)	10V	6.3Ohm @ 1A, 10V	5V @ 250µA	11 nC @ 10 V	±30V	350 pF @ 25 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
FDPF680N10T MOSFET N-CH 100V 12A TO220F Fairchild Semiconductor	29,806	RFQ	Datasheet	PowerTrench®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	10V	68mOhm @ 6A, 10V	4.5V @ 250µA	17 nC @ 10 V	±20V	1000 pF @ 50 V	-	24W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
IRFR420T 2.5A, 500V, 3OHM, N-CHANNEL MOSF Fairchild Semiconductor	7,500	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLR130ATF 13A, 100V, 0.12OHM, N-CHANNEL MO Fairchild Semiconductor	2,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7470TRPBF IRF7470 - 12V-300V N-CHANNEL POW International Rectifier	1,278	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	10A (Ta)	2.8V, 10V	13mOhm @ 10A, 10V	2V @ 250µA	44 nC @ 4.5 V	±12V	3430 pF @ 20 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
GT180P08T MOSFET P-CH 80V 89A 245W 17m(max Goford Semiconductor	5,000	RFQ	Datasheet	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	40 V	89A (Tc)	4.5V, 10V	17mOhm @ 20A, 10V	2.5V @ 250µA	62 nC @ 10 V	±20V	6040 pF @ 40 V	-	245W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
IPD50N04S308ATMA1 IPD50N04 - 20V-40V N-CHANNEL AUT Infineon Technologies	125,808	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	50A (Tc)	10V	7.5mOhm @ 50A, 10V	4V @ 40µA	35 nC @ 10 V	±20V	2350 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
FDP7030BL POWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor	56,536	RFQ	Datasheet	PowerTrench®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	60A (Ta)	4.5V, 10V	9mOhm @ 30A, 10V	3V @ 250µA	24 nC @ 5 V	±20V	1760 pF @ 15 V	-	60W (Tc)	-65°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
AM4394N MOSFET N-CH 150V 6.5A SOIC-8 Analog Power Inc.	5,000	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	6.5A (Ta)	5.5V, 10V	50mOhm @ 5.2A, 10V	1V @ 250µA	58 nC @ 5.5 V	±20V	4388 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
BUK7E4R6-60E,127 NEXPERIA BUK7E4 - TRANSISTOR >30 NXP Semiconductors	2,920	RFQ	Datasheet	TrenchMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4.6mOhm @ 25A, 10V	4V @ 1mA	82 nC @ 10 V	±20V	6230 pF @ 25 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	I2PAK
GT011N03TLE MOSFET N-CH 30V 250A 300W 1.2m( Goford Semiconductor	2,000	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	250A (Tc)	4.5V, 10V	1.2mOhm @ 10A, 10V	2.5V @ 250µA	98 nC @ 10 V	±18V	6278 pF @ 15 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL-8L
GT250P10T MOSFET P-CH 100V 56A 173.6W 30m( Goford Semiconductor	2,000	RFQ	Datasheet	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	56A (Tc)	10V	30mOhm @ 10A, 10V	4V @ 250µA	73 nC @ 10 V	±20V	4059 pF @ 50 V	-	173.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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