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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
H5N2305P-E Renesas Electronics Corporation

H5N2305P-E

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics Corporation

310
Datasheet - TO-3PFM, SC-93-3 Bulk Active N-Channel MOSFET (Metal Oxide) 230 V 35A (Ta) 10V 700mOhm @ 6A, 10V 4V @ 1mA 105 nC @ 10 V ±30V - - 60W (Tc) 150°C - - Through Hole TO-3PFM
STI30N65M5 STMicroelectronics

STI30N65M5

MOSFET N-CH 650V 22A I2PAK

STMicroelectronics

993
Datasheet MDmesh™ V TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 140W (Tc) 150°C (TJ) - - Through Hole I2PAK
MCTL300N10Y-TP Micro Commercial Co

MCTL300N10Y-TP

MOSFET N-CH 100V 300A TOLL-8L

Micro Commercial Co

21,124
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) - 1.45mOhm @ 30A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13258 pF @ 50 V - 500W -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
FCP36N60N onsemi

FCP36N60N

MOSFET N-CH 600V 36A TO220-3

onsemi

8,030
Datasheet SupreMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IXFH270N06T3 IXYS

IXFH270N06T3

MOSFET N-CH 60V 270A TO247

IXYS

495
Datasheet HiperFET™, TrenchT3™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 270A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 12600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
4AK18 Renesas Electronics Corporation

4AK18

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

6,497
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
SD211DE TO-72 4L ROHS Linear Integrated Systems, Inc.

SD211DE TO-72 4L ROHS

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.

303
Datasheet SD211 TO-206AF, TO-72-4 Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 5V, 25V 45Ohm @ 1mA, 10V 1.5V @ 1µA - +25V, -300mV - - 300mW (Ta) -55°C ~ 125°C (TJ) - - Through Hole TO-72-4
IRFAC50 International Rectifier

IRFAC50

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

129
Datasheet - TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A - - - - - - - 150W - - - Through Hole TO-204AA (TO-3)
STW19NM50N STMicroelectronics

STW19NM50N

MOSFET N-CH 500V 14A TO247-3

STMicroelectronics

313
Datasheet MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-247-3
IPT014N10N5ATMA1 Infineon Technologies

IPT014N10N5ATMA1

TRENCH >=100V

Infineon Technologies

901
Datasheet OptiMOS™ 8-PowerSFN Tape & Reel (TR) Last Time Buy - MOSFET (Metal Oxide) 100 V 362A 10V - - - - - - - - - - Surface Mount PG-HSOF-8-1
BTS131E3045ANTMA1 Infineon Technologies

BTS131E3045ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

8,919
Datasheet TEMPFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 25A (Tc) 4.5V 60mOhm @ 12A, 4.5V 2.5V @ 1mA - ±10V 1400 pF @ 25 V - 75W -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
STW28NM60ND STMicroelectronics

STW28NM60ND

MOSFET N-CH 600V 23A TO247

STMicroelectronics

127
Datasheet FDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 150mOhm @ 11.5A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2090 pF @ 100 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-247-3
STW15NM60ND STMicroelectronics

STW15NM60ND

MOSFET N-CH 600V 14A TO247-3

STMicroelectronics

372
Datasheet FDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 299mOhm @ 7A, 10V 5V @ 250µA 40 nC @ 10 V ±25V 1250 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
RJK1525DPP-MG#T2 Renesas Electronics Corporation

RJK1525DPP-MG#T2

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,582
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
GPI65015DFN GaNPower

GPI65015DFN

GANFET N-CH 650V 15A DFN 8X8

GaNPower

160
Datasheet - Die Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A 6V - 1.2V @ 3.5mA 3.3 nC @ 6 V +7.5V, -12V 116 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
FDMT1D3N08B onsemi

FDMT1D3N08B

MOSFET N-CH 80V 164A 8DL COOL88

onsemi

2,727
Datasheet PowerTrench® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 164A (Tc) 8V, 10V 1.35mOhm @ 36A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 19600 pF @ 40 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-Dual Cool™88
RJK1536DPE-00#J3 Renesas Electronics Corporation

RJK1536DPE-00#J3

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

86,960
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
RFG75N05E Harris Corporation

RFG75N05E

N-CHANNEL POWER MOSFET

Harris Corporation

18,160
Datasheet - TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 400 nC @ 20 V ±20V - - 240W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
IRFP350LCPBF Vishay Siliconix

IRFP350LCPBF

MOSFET N-CH 400V 16A TO247-3

Vishay Siliconix

4,236
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 76 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
CGD65A130S2-T13 Cambridge GaN Devices

CGD65A130S2-T13

650V GAN HEMT, 130MOHM, DFN8X8.

Cambridge GaN Devices

3,306
Datasheet ICeGaN™ 16-PowerVDFN Cut Tape (CT) Active - GaNFET (Gallium Nitride) 650 V 12A (Tc) 12V 182mOhm @ 900mA, 12V 4.2V @ 4.2mA 2.3 nC @ 12 V +20V, -1V - Current Sensing - -55°C ~ 150°C (TJ) - - Surface Mount 16-DFN (8x8)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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