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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPCC8104,L1Q(CM Toshiba Semiconductor and Storage

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

5,080
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPCC8105,L1Q(CM Toshiba Semiconductor and Storage

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage

2,514
Datasheet U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8136.LQ Toshiba Semiconductor and Storage

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage

3,328
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK40J20D,S1F(O Toshiba Semiconductor and Storage

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage

7,100
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C - - Through Hole TO-3P(N)
TPCC8104,L1Q Toshiba Semiconductor and Storage

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

7,515
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK12J60W,S1VE(S Toshiba Semiconductor and Storage

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Toshiba Semiconductor and Storage

6,276
Datasheet - TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-3P(N)
TPCA8128,L1Q Toshiba Semiconductor and Storage

TPCA8128,L1Q

MOSFET P-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

6,835
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 4.8mOhm @ 17A, 10V 2V @ 500µA 115 nC @ 10 V +20V, -25V 4800 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5)
TK430A60F,S4X(S Toshiba Semiconductor and Storage

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

6,663
Datasheet U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK370A60F,S4X(S Toshiba Semiconductor and Storage

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

4,152
Datasheet U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
SSM3K15CT,L3F Toshiba Semiconductor and Storage

SSM3K15CT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

2,779
Datasheet - SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount CST3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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