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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK4A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A60D(STA4,Q,M)

MOSFET N-CH 600V 4A TO220SIS

Toshiba Semiconductor and Storage

5,662
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPCC8003-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Toshiba Semiconductor and Storage

9,245
Datasheet U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 16.9mOhm @ 6.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1300 pF @ 10 V - 700mW (Ta), 22W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage

TPCC8008(TE12L,QM)

MOSFET N-CH 30V 25A 8TSON

Toshiba Semiconductor and Storage

3,239
Datasheet U-MOSIV 8-VDFN Exposed Pad Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.8mOhm @ 12.5A, 10V 2.5V @ 1A 30 nC @ 10 V ±25V 1600 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
SSM3J108TU(TE85L) Toshiba Semiconductor and Storage

SSM3J108TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

4,079
Datasheet U-MOSIII 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.8V, 4V 158mOhm @ 800mA, 4V 1V @ 1mA - ±8V 250 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
TK40P03M1(T6RSS-Q) Toshiba Semiconductor and Storage

TK40P03M1(T6RSS-Q)

MOSFET N-CH 30V 40A DP

Toshiba Semiconductor and Storage

5,686
Datasheet U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - - - Surface Mount DPAK
TK40P04M1(T6RSS-Q) Toshiba Semiconductor and Storage

TK40P04M1(T6RSS-Q)

MOSFET N-CH 40V 40A DP

Toshiba Semiconductor and Storage

6,191
Datasheet U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 11mOhm @ 20A, 10V 2.3V @ 200µA 29 nC @ 10 V ±20V 1920 pF @ 10 V - 47W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4A60DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A60DA(STA4,Q,M)

MOSFET N-CH 600V 3.5A TO220SIS

Toshiba Semiconductor and Storage

3,900
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage

TK10S04K3L(T6L1,NQ

MOSFET N-CH 40V 10A DPAK

Toshiba Semiconductor and Storage

2,123
Datasheet U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 28mOhm @ 5A, 10V 3V @ 1mA 10 nC @ 10 V ±20V 410 pF @ 10 V - 25W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK11A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK11A60D(STA4,Q,M)

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage

6,995
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK15A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK15A60D(STA4,Q,M)

MOSFET N-CH 600V 15A TO220SIS

Toshiba Semiconductor and Storage

2,606
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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