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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPCA8047-H(T2L1,VM Toshiba Semiconductor and Storage

TPCA8047-H(T2L1,VM

MOSFET N-CH 40V 32A 8SOP

Toshiba Semiconductor and Storage

6,282
Datasheet U-MOSVI-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 32A (Ta) 4.5V, 10V 7.3mOhm @ 16A, 10V 2.3V @ 500µA 43 nC @ 10 V ±20V 3365 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5)
TPCC8005-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8005-H(TE12LQM

MOSFET N-CH 30V 26A 8TSON

Toshiba Semiconductor and Storage

4,056
Datasheet U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta) 4.5V, 10V 6.4mOhm @ 13A, 10V 2.3V @ 500µA 35 nC @ 10 V ±20V 2900 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8006-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

8,322
Datasheet U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8mOhm @ 11A, 10V 2.3V @ 200µA 27 nC @ 10 V ±20V 2200 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8A01-H(TE12LQM

MOSFET N-CH 30V 21A 8TSON

Toshiba Semiconductor and Storage

3,442
Datasheet U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 9.9mOhm @ 10.5A, 10V 2.3V @ 1mA 20 nC @ 10 V ±20V 1900 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8001-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

3,588
Datasheet U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8002-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8002-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

9,408
Datasheet U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage

TPCC8002-H(TE12L,Q

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

6,876
Datasheet U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPN2R503NC,L1Q Toshiba Semiconductor and Storage

TPN2R503NC,L1Q

MOSFET N CH 30V 40A 8TSON-ADV

Toshiba Semiconductor and Storage

7,037
Datasheet U-MOSVIII 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2230 pF @ 15 V - 700mW (Ta), 35W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
2SK2883(TE24L,Q) Toshiba Semiconductor and Storage

2SK2883(TE24L,Q)

MOSFET N-CH 800V 3A TO220SM

Toshiba Semiconductor and Storage

3,102
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 3.6Ohm @ 1.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 750 pF @ 25 V - 75W (Tc) 150°C (TJ) - - Surface Mount TO-220SM
TPN14006NH,L1Q Toshiba Semiconductor and Storage

TPN14006NH,L1Q

MOSFET N CH 60V 13A 8TSON-ADV

Toshiba Semiconductor and Storage

9,535
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta) 6.5V, 10V 14mOhm @ 6.5A, 10V 4V @ 200µA 15 nC @ 10 V ±20V 1300 pF @ 30 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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