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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQE004NE1LM7CGATMA1 Infineon Technologies

IQE004NE1LM7CGATMA1

TRENCH <= 40V

Infineon Technologies

9,900
Datasheet OptiMOS™ 7 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TTFN-9-3
ISC078N12NM6ATMA1 Infineon Technologies

ISC078N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,885
Datasheet OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 13.2A (Ta), 85A (Tc) 8V, 10V 7.8mOhm @ 37A, 10V 3.6V @ 49.6µA 26 nC @ 10 V ±20V 2000 pF @ 60 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SuperSO8
IQE004NE1LM7ATMA1 Infineon Technologies

IQE004NE1LM7ATMA1

TRENCH <= 40V

Infineon Technologies

4,360
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-5
NTMYS2D1N04CLTWG onsemi

NTMYS2D1N04CLTWG

MOSFET N-CH 40V 258A

onsemi

3,000
Datasheet - SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - - 29A (Ta), 132A (Tc) - - - - - - - - - - - Surface Mount LFPAK4 (5x6)
PJQ5540V-AU_R2_002A1 Panjit International Inc.

PJQ5540V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,730
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29.7A (Ta), 174A (Tc) 7V, 10V 2.1mOhm @ 20A, 10V 3.5V @ 50µA 63 nC @ 10 V ±20V 4690 pF @ 25 V - 3.3W (Ta), 115.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060X-8L
DMTH10H003SPSW-13 Diodes Incorporated

DMTH10H003SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,150
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 166A (Tc) 6V, 10V 3mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5542 pF @ 50 V - 2.6W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8 (Type Q)
BUK766R0-60E,118 Nexperia USA Inc.

BUK766R0-60E,118

MOSFET N-CH 60V 75A D2PAK

Nexperia USA Inc.

1,534
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 4520 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
CDMSJ22010-650 SL Central Semiconductor Corp

CDMSJ22010-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V 30V 726 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIJ4819DP-T1-GE3 Vishay Siliconix

SIJ4819DP-T1-GE3

P-CHANNEL 80-V (D-S) MOSFET POWE

Vishay Siliconix

5,996
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 11.5A (Ta), 44.4A (Tc) 4.5V, 10V 20.7mOhm @ 10A, 10V 2.6V @ 250µA 65 nC @ 10 V ±20V 3420 pF @ 40 V - 5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ5592-AU_R2_002A1 Panjit International Inc.

PJQ5592-AU_R2_002A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
R6010YNXC7G Rohm Semiconductor

R6010YNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

983
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 47W (Tc) 150°C (TJ) - - Through Hole TO-220FM
R6027YNX3C16 Rohm Semiconductor

R6027YNX3C16

NCH 600V 27A, TO-220AB, POWER MO

Rohm Semiconductor

980
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-220AB
TSM60NC196CI C0G Taiwan Semiconductor Corporation

TSM60NC196CI C0G

600V, 20A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,840
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±30V 1535 pF @ 300 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
IRFSL5615PBF Infineon Technologies

IRFSL5615PBF

MOSFET N-CH 150V 33A TO262

Infineon Technologies

964
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IQE220N15NM5CGATMA1 Infineon Technologies

IQE220N15NM5CGATMA1

TRENCH >=100V

Infineon Technologies

4,970
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18.3 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-3
IQE220N15NM5ATMA1 Infineon Technologies

IQE220N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

5,000
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta), 44A (Tc) 8V, 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
XPJ1R004PB,LXHQ Toshiba Semiconductor and Storage

XPJ1R004PB,LXHQ

40V; UMOS9; MOSFET 1MOHM; L-TOGL

Toshiba Semiconductor and Storage

2,975
Datasheet - 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1mOhm @ 80A, 10V 3V @ 500µA 84 nC @ 10 V ±20V 6890 pF @ 10 V - 223W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
XP10N3R8IT YAGEO XSEMI

XP10N3R8IT

FET N-CH 100V 67.7A TO220CFM

YAGEO XSEMI

1,000
Datasheet XP10N3R8 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 67.7A (Ta) 10V 3.88mOhm @ 35A, 10V 4V @ 250µA 131 nC @ 10 V ±20V 6560 pF @ 80 V - 1.92W (Ta), 32.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
SIHP14N60E-BE3 Vishay Siliconix

SIHP14N60E-BE3

N-CHANNEL 600V

Vishay Siliconix

972
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
TPW2R508NH,L1Q Toshiba Semiconductor and Storage

TPW2R508NH,L1Q

PB-F POWER MOSFET TRANSISTOR DOS

Toshiba Semiconductor and Storage

10,902
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Ta) 10V 2.5mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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