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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT20M22B2VRG Microsemi Corporation

APT20M22B2VRG

MOSFET N-CH 200V 100A T-MAX

Microsemi Corporation

3,333
Datasheet POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT70SM70B Microsemi Corporation

APT70SM70B

SICFET N-CH 700V 65A TO247

Microsemi Corporation

7,076
Datasheet - TO-247-3 Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 70mOhm @ 32.5A, 20V 2.5V @ 1mA 125 nC @ 20 V +25V, -10V - - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247 [B]
APT53N60SC6 Microsemi Corporation

APT53N60SC6

MOSFET N-CH 600V 53A D3PAK

Microsemi Corporation

5,016
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 154 nC @ 10 V ±20V 4020 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT10M09B2VFRG Microsemi Corporation

APT10M09B2VFRG

MOSFET N-CH 100V 100A T-MAX

Microsemi Corporation

9,108
Datasheet POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 2.5mA 350 nC @ 10 V ±30V 9875 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT70SM70S Microsemi Corporation

APT70SM70S

SICFET N-CH 700V 65A D3PAK

Microsemi Corporation

4,252
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 70mOhm @ 32.5A, 20V 2.5V @ 1mA 125 nC @ 20 V +25V, -10V - - 220W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT36N90BC3G Microsemi Corporation

APT36N90BC3G

MOSFET N-CH 900V 36A TO247

Microsemi Corporation

5,518
Datasheet CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 18A, 10V 3.5V @ 2.9mA 252 nC @ 10 V ±20V 7463 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT20M22B2VFRG Microsemi Corporation

APT20M22B2VFRG

MOSFET N-CH 200V 100A T-MAX

Microsemi Corporation

9,569
Datasheet POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT50M80B2VRG Microsemi Corporation

APT50M80B2VRG

MOSFET N-CH 500V 58A T-MAX

Microsemi Corporation

5,782
Datasheet POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 80mOhm @ 29A, 10V 4V @ 2.5mA 423 nC @ 10 V - 8797 pF @ 25 V - - - - - Through Hole T-MAX™ [B2]
APT40M70LVFRG Microsemi Corporation

APT40M70LVFRG

MOSFET N-CH 400V 57A TO264

Microsemi Corporation

7,920
Datasheet POWER MOS V® TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 57A (Tc) 10V 70mOhm @ 500mA, 10V 4V @ 2.5mA 495 nC @ 10 V ±30V 8890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
APT40SM120B Microsemi Corporation

APT40SM120B

SICFET N-CH 1200V 41A TO247

Microsemi Corporation

4,159
Datasheet - TO-247-3 Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 3V @ 1mA (Typ) 130 nC @ 20 V +25V, -10V 2560 pF @ 1000 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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