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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHA20N50E-E3 Vishay Siliconix

SIHA20N50E-E3

MOSFET N-CH 500V 19A TO220

Vishay Siliconix

496
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIRS4302DP-T1-GE3 Vishay Siliconix

SIRS4302DP-T1-GE3

N-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

11,921
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Ta), 478A (Tc) 4.5V, 10V 0.57mOhm @ 20A, 10V 2.2V @ 250µA 230 nC @ 10 V +20V, -16V 10150 pF @ 15 V - 6.9W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHB25N50E-GE3 Vishay Siliconix

SIHB25N50E-GE3

MOSFET N-CH 500V 26A TO263

Vishay Siliconix

1,000
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIDR510EP-T1-RE3 Vishay Siliconix

SIDR510EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

5,782
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta), 148A (Tc) 7.5V, 10V 3.6mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 4980 pF @ 50 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
IRFIBF20GPBF Vishay Siliconix

IRFIBF20GPBF

MOSFET N-CH 900V 1.2A TO220-3

Vishay Siliconix

988
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 900 V 1.2A (Tc) 10V 8Ohm @ 720mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIHB150N60E-GE3 Vishay Siliconix

SIHB150N60E-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix

992
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 158mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRL640STRRPBF Vishay Siliconix

IRL640STRRPBF

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix

3,200
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIDR570EP-T1-RE3 Vishay Siliconix

SIDR570EP-T1-RE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix

5,990
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 30.8A (Ta), 90.9A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
IRF740LCPBF-BE3 Vishay Siliconix

IRF740LCPBF-BE3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix

975
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) - 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHP23N60E-BE3 Vishay Siliconix

SIHP23N60E-BE3

N-CHANNEL 600V

Vishay Siliconix

994
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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