FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR166DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 |
2,380 |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3.2mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | ±20V | 3340 pF @ 15 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SISS60DN-T1-GE3MOSFET N-CH 30V 50.1/181.8A PPAK |
5,995 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50.1A (Ta), 181.8A (Tc) | 4.5V, 10V | 1.31mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +16V, -12V | 3960 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
|
SISS66DN-T1-GE3MOSFET N-CH 30V 49.1/178.3A PPAK |
4,562 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 49.1A (Ta), 178.3A (Tc) | 4.5V, 10V | 1.38mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +20V, -16V | 3327 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SIHU7N60E-GE3MOSFET N-CH 600V 7A IPAK |
2,990 |
|
Datasheet | - | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
.jpg "IRFR9014PBF-BE3")
|
IRFR9014PBF-BE3P-CHANNEL 60V |
2,968 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SISS5112DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW |
11,904 |
|
Datasheet | TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 40.7A (Tc) | 7.5V, 10V | 14.9mOhm @ 10A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
|
IRFR220PBF-BE3N-CHANNEL 200V |
3,000 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFR9110TRLPBFMOSFET P-CH 100V 3.1A DPAK |
3,000 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
;;3.jpg "SIHU4N80AE-GE3")
|
SIHU4N80AE-GE3MOSFET N-CH 800V 4.3A IPAK |
2,994 |
|
Datasheet | E | TO-251-3 Long Leads, IPAK, TO-251AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251) |
|
|
SISS5110DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW |
12,000 |
|
Datasheet | TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.4A (Ta), 46.4A (Tc) | 7.5V, 10V | 8.9mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±25V | 920 pF @ 50 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
