FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHB21N65EF-GE3MOSFET N-CH 650V 21A D2PAK |
143 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±30V | 2322 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SQJ456EP-T1_GE3MOSFET N-CH 100V 32A PPAK SO-8 |
4,408 |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 6V, 10V | 26mOhm @ 9.3A, 10V | 3.5V @ 250µA | 63 nC @ 10 V | ±20V | 3342 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SIHB120N60E-GE3MOSFET N-CH 600V 25A D2PAK |
906 |
|
Datasheet | E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1562 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHH14N65EF-T1-GE3MOSFET N-CH 650V 15A PPAK 8 X 8 |
3,000 |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 271mOhm @ 7A, 10V | 4V @ 250µA | 98 nC @ 10 V | ±30V | 1749 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
SIHB080N60E-GE3E SERIES POWER MOSFET D2PAK (TO- |
1,722 |
|
Datasheet | E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 80mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2557 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHF068N60EF-GE3MOSFET N-CH 600V 16A TO220 |
623 |
|
Datasheet | EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SIHK125N60EF-T1GE3E SERIES POWER MOSFET WITH FAST |
2,050 |
|
Datasheet | EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1863 pF @ 100 V | - | 132W (Tc) | -55°C ~ 150°C | - | - | Surface Mount | PowerPAK®10 x 12 |
|
|
SIHK105N60E-T1-GE3E SERIES POWER MOSFET WITH FAST |
2,050 |
|
Datasheet | EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 105mOhm @ 10A, 10V | 5V @ 250µA | 51 nC @ 10 V | ±30V | 2301 pF @ 100 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
|
|
SIHK105N60EF-T1GE3E SERIES POWER MOSFET POWERPAK 1 |
1,990 |
|
Datasheet | EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 105mOhm @ 10A, 10V | 5V @ 250µA | 51 nC @ 10 V | ±30V | 2301 pF @ 100 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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|
SIHB30N60ET1-GE3N-CHANNEL 600V |
1,112 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
