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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFR220TRPBF-BE3 Vishay Siliconix

IRFR220TRPBF-BE3

N-CHANNEL 200V

Vishay Siliconix

3,833
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
SIR570DP-T1-BE3 Vishay Siliconix

SIR570DP-T1-BE3

N-CHANNEL 150 V (D-S) 175 C MOSF

Vishay Siliconix

2,696
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 19A (Ta), 77.4A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHF9630S-GE3 Vishay Siliconix

SIHF9630S-GE3

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix

5,645
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIR5808DP-T1-RE3 Vishay Siliconix

SIR5808DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET POWE

Vishay Siliconix

4,722
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18.8A (Ta), 66.8A (Tc) 7.5V, 10V 157mOhm @ 10A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 1210 pF @ 40 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR578DP-T1-BE3 Vishay Siliconix

SIR578DP-T1-BE3

N-CHANNEL 150 V (D-S) MOSFET 150

Vishay Siliconix

7,213
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 17.2A (Ta), 70.2A (Tc) 7.5V, 10V 8.8mOhm @ 20A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2540 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR690DP-T1-RE3 Vishay Siliconix

SIR690DP-T1-RE3

MOSFET N-CH 200V 34.4A PPAK SO-8

Vishay Siliconix

9,056
Datasheet ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 34.4A (Tc) 7.5V, 10V 35mOhm @ 20A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 1935 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHP105N60EF-GE3 Vishay Siliconix

SIHP105N60EF-GE3

MOSFET N-CH 600V 29A TO220AB

Vishay Siliconix

3,291
Datasheet EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHG120N60E-GE3 Vishay Siliconix

SIHG120N60E-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix

4,565
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SISS5808DN-T1-GE3 Vishay Siliconix

SISS5808DN-T1-GE3

N-CHANNEL 80 V (D-S) MOSFET POWE

Vishay Siliconix

2,964
Datasheet TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18.3A (Ta), 66.6A (Tc) 7.5V, 10V 119mOhm @ 3.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 1210 pF @ 40 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SIHP33N60E-GE3 Vishay Siliconix

SIHP33N60E-GE3

MOSFET N-CH 600V 33A TO220AB

Vishay Siliconix

8,931
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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