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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK5P50D(T6RSS-Q) Toshiba Semiconductor and Storage

TK5P50D(T6RSS-Q)

MOSFET N-CH 500V 5A DPAK

Toshiba Semiconductor and Storage

3,871
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
IAUC64N08S5L075ATMA1 Infineon Technologies

IAUC64N08S5L075ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies

3,580
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tj) 4.5V, 10V 7.5mOhm @ 32A, 10V 2V @ 30µA 37 nC @ 10 V ±20V 2106 pF @ 40 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-33
PJQ5562A_R2_00201 Panjit International Inc.

PJQ5562A_R2_00201

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMNH4005SPSQ-13 Diodes Incorporated

DMNH4005SPSQ-13

MOSFET N-CH 40V 80A PWRDI5060-8

Diodes Incorporated

2,434
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 20A, 10V 3V @ 250µA 48 nC @ 10 V 20V 2847 pF @ 20 V - 2.8W -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8
PJL9580_R2_00201 Panjit International Inc.

PJL9580_R2_00201

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

2,000
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PSMN2R0-40YLBX Nexperia USA Inc.

PSMN2R0-40YLBX

PSMN2R0-40YLB/SOT669/LFPAK

Nexperia USA Inc.

1,500
Datasheet - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.1mOhm @ 25A, 10V 2.05V @ 1mA 87 nC @ 10 V ±20V 6416 pF @ 20 V Schottky Diode (Body) 166W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
PSMN2R2-40YSBX Nexperia USA Inc.

PSMN2R2-40YSBX

PSMN2R2-40YSB/SOT669/LFPAK

Nexperia USA Inc.

1,485
Datasheet - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 2.2mOhm @ 25A, 10V 3.6V @ 1mA 69 nC @ 10 V ±20V 5173 pF @ 20 V Schottky Diode (Body) 166W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
RCJ100N25TL Rohm Semiconductor

RCJ100N25TL

MOSFET N-CH 250V 10A LPT

Rohm Semiconductor

990
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 10A (Tc) 10V 320mOhm @ 5A, 10V 5V @ 1mA 26.5 nC @ 10 V ±30V 1440 pF @ 25 V - 1.56W (Ta), 85W (Tc) 150°C (TJ) - - Surface Mount LPTS
MCB011N10YL-TP Micro Commercial Co

MCB011N10YL-TP

N-CHANNEL MOSFET,D2-PAK

Micro Commercial Co

1,396
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V 3V @ 250µA 29.8 nC @ 10 V ±20V 1404 pF @ 50 V - 100W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
NVTFS4C13NWFTWG onsemi

NVTFS4C13NWFTWG

MOSFET N-CH 30V 14A 8WDFN

onsemi

45,000
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 9.4mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 3W (Ta), 26W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
TSM040N03CP ROG Taiwan Semiconductor Corporation

TSM040N03CP ROG

MOSFET N-CHANNEL 30V 90A TO252

Taiwan Semiconductor Corporation

10,000
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V 2.5V @ 250µA 53 nC @ 4.5 V ±20V 2200 pF @ 25 V - 88W (Tc) 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NTMFS5C423NLT3G onsemi

NTMFS5C423NLT3G

MOSFET N-CH 40V 150A 5DFN

onsemi

4,988
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 20 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
PHB29N08T,118 Nexperia USA Inc.

PHB29N08T,118

MOSFET N-CH 75V 27A D2PAK

Nexperia USA Inc.

3,734
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 27A (Tc) 11V 50mOhm @ 14A, 11V 5V @ 2mA 19 nC @ 10 V ±30V 810 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
XP10TN135H YAGEO XSEMI

XP10TN135H

MOSFET N-CH 100V 8.1A TO252

YAGEO XSEMI

1,000
Datasheet XP10TN135 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 8.1A (Tc) 4.5V, 10V 135mOhm @ 5A, 10V 3V @ 250µA 17.6 nC @ 10 V ±20V 928 pF @ 50 V - 2W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
NTMFS5C442NLT3G onsemi

NTMFS5C442NLT3G

MOSFET N-CH 40V 27A/130A 5DFN

onsemi

4,999
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 130A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.1W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IPD90N06S4L06ATMA2 Infineon Technologies

IPD90N06S4L06ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies

3,357
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
NVTFWS024N06CTAG onsemi

NVTFWS024N06CTAG

MOSFET N-CH 60V 7A/24A 8WDFN

onsemi

1,500
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 24A (Tc) 10V 22.6mOhm @ 3A, 10V 4V @ 20µA 5.7 nC @ 10 V ±20V 333 pF @ 30 V - 2.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
XP4N4R2H YAGEO XSEMI

XP4N4R2H

MOSFET N-CH 40V 75A TO252

YAGEO XSEMI

990
Datasheet XP4N4R2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 4.2mOhm @ 40A, 10V 3V @ 250µA 44.8 nC @ 4.5 V ±20V 4000 pF @ 20 V - 2W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
PJQ5431E-AU_R2_006A1 Panjit International Inc.

PJQ5431E-AU_R2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,798
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 86A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V 2.5V @ 250µA 68 nC @ 10 V ±25V 3040 pF @ 25 V - 3.3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
NVMYS2D9N04CLTWG onsemi

NVMYS2D9N04CLTWG

MOSFET N-CH 40V 27A/110A LFPAK4

onsemi

2,720
Datasheet - SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2V @ 60µA 35 nC @ 10 V ±20V 2100 pF @ 20 V - 3.7W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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