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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
DMTH4008LPSQ-13 Diodes Incorporated

DMTH4008LPSQ-13

MOSFET N-CH 40V PWRDI5060

Diodes Incorporated

4,835
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14.4A (Ta), 64.8A (Tc) 5V, 10V 8.8mOhm @ 10A, 10V 3V @ 250µA 15.3 nC @ 10 V ±20V 1088 pF @ 20 V - 2.99W (Ta), 55.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
PJQ5437E_R2_00201 Panjit International Inc.

PJQ5437E_R2_00201

30V P-CHANNEL STANDARD TRENCH MO

Panjit International Inc.

3,000
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSM60NC980CH C5G Taiwan Semiconductor Corporation

TSM60NC980CH C5G

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

13,114
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 11 nC @ 10 V ±20V 330 pF @ 300 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
IPD047N03LF2SATMA1 Infineon Technologies

IPD047N03LF2SATMA1

MOSFET N-CH 30V 71A TO-252

Infineon Technologies

2,000
Datasheet StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 4.7mOhm @ 40A, 10V 2.35V @ 30µA 32 nC @ 10 V ±20V 1400 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
DI040P04PT Diotec Semiconductor

DI040P04PT

MOSFET POWERQFN 3X3 P -40V -40A

Diotec Semiconductor

4,850
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-QFN (3x3)
RQ6P020ATTCR Rohm Semiconductor

RQ6P020ATTCR

PCH -100V -2A POWER MOSFET: RQ6P

Rohm Semiconductor

4,849
Datasheet - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2A (Ta) 4.5V, 10V 220mOhm @ 2A, 10V 2.5V @ 1mA 24 nC @ 10 V ±20V 760 pF @ 50 V - 950mW (Ta) 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
IAUZ30N08S5N186ATMA1 Infineon Technologies

IAUZ30N08S5N186ATMA1

MOSFET_(75V 120V( PG-TSDSON-8

Infineon Technologies

4,210
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tj) 6V, 10V 18.6mOhm @ 15A, 10V 3.8V @ 13µA 12.1 nC @ 10 V ±20V 759 pF @ 40 V - 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8-32
PJQ5548-AU_R2_002A1 Panjit International Inc.

PJQ5548-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,775
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14.5A (Ta), 48A (Tc) 4.5V, 10V 8.8mOhm @ 20A, 10V 2.3V @ 50µA 13 nC @ 10 V ±20V 778 pF @ 25 V - 3.3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
TK4P60D,RQ Toshiba Semiconductor and Storage

TK4P60D,RQ

PB-F POWER MOSFET TRANSISTOR DP(

Toshiba Semiconductor and Storage

920
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 100W (Tc) 150°C - - Surface Mount DPAK
ZVN4424GQTA Diodes Incorporated

ZVN4424GQTA

MOSFET N-CH 240V SOT223 T&R

Diodes Incorporated

856
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240 V 500mA (Ta) 2.5V, 10V 5.5Ohm @ 500mA, 10V 1.8V @ 1mA - ±40V 200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223
DMT32M5LPS-13 Diodes Incorporated

DMT32M5LPS-13

MOSFET N-CH 30V 150A PWRDI5060-8

Diodes Incorporated

12,103
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 3V @ 1mA 68 nC @ 10 V ±20V 3944 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
SIA108DJ-T1-GE3 Vishay Siliconix

SIA108DJ-T1-GE3

MOSFET N-CH 80V 6.6A/12A PPAK

Vishay Siliconix

4,674
Datasheet TrenchFET® Gen IV PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 6.6A (Ta), 12A (Tc) 7.5V, 10V 38mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 545 pF @ 40 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
SIHFR320-GE3 Vishay Siliconix

SIHFR320-GE3

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix

1,902
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IPP050N03LF2SAKSA1 Infineon Technologies

IPP050N03LF2SAKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies

968
Datasheet StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 53A (Tc) 4.5V, 10V 4.95mOhm @ 30A, 10V 2.35V @ 30µA 32 nC @ 10 V ±20V 1400 pF @ 15 V - 3.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-U05
SIHFR9024TR-GE3 Vishay Siliconix

SIHFR9024TR-GE3

MOSFET P-CH 60V 8.8A DPAK

Vishay Siliconix

774
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
DMPH4025SFVWQ-13 Diodes Incorporated

DMPH4025SFVWQ-13

MOSFET P-CH 40V PWRDI3333

Diodes Incorporated

990
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.7A (Ta), 40A (Tc) 4.5V, 10V 25mOhm @ 30A, 10V 1.8V @ 250µA 38.6 nC @ 10 V ±20V 1918 pF @ 20 V - 2.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
FDMA410NZT-F130 onsemi

FDMA410NZT-F130

PT4 NCH 20/8V ZENER IN

onsemi

12,000
Datasheet - 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) 1.5V, 4.5V 23mOhm @ 9.5A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1310 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (2.05x2.05)
MCU60N06-TP Micro Commercial Co

MCU60N06-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

5,000
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 11mOhm @ 20A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2220 pF @ 30 V - 83W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
PJQ4528P-AU_R2_002A1 Panjit International Inc.

PJQ4528P-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

5,000
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5548V-AU_R2_002A1 Panjit International Inc.

PJQ5548V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 13.6A (Ta), 45A (Tc) 7V, 10V 10mOhm @ 20A, 10V 3.5V @ 50µA 9.5 nC @ 10 V ±20V 673 pF @ 25 V - 3.3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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