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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM80N1R2CP ROG Taiwan Semiconductor Corporation

TSM80N1R2CP ROG

MOSFET N-CH 800V 5.5A TO252

Taiwan Semiconductor Corporation

6,253
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB099CZ C0G Taiwan Semiconductor Corporation

TSM60NB099CZ C0G

MOSFET N-CHANNEL 600V 38A TO220

Taiwan Semiconductor Corporation

7,073
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM60NB190CZ Taiwan Semiconductor Corporation

TSM60NB190CZ

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,432
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM80N950CP ROG Taiwan Semiconductor Corporation

TSM80N950CP ROG

MOSFET N-CHANNEL 800V 6A TO252

Taiwan Semiconductor Corporation

2,482
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB260CI Taiwan Semiconductor Corporation

TSM60NB260CI

600V, 13A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

7,565
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 260mOhm @ 3.9A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1273 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM60NC196CI Taiwan Semiconductor Corporation

TSM60NC196CI

600V, 20A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,336
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±30V 1535 pF @ 300 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM60NB190CM2 Taiwan Semiconductor Corporation

TSM60NB190CM2

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

8,292
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
TSM60NB190CI Taiwan Semiconductor Corporation

TSM60NB190CI

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,884
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 33.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM60N380CP ROG Taiwan Semiconductor Corporation

TSM60N380CP ROG

MOSFET N-CHANNEL 600V 11A TO252

Taiwan Semiconductor Corporation

7,546
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 20.5 nC @ 10 V ±30V 1040 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB190CM2 RNG Taiwan Semiconductor Corporation

TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

Taiwan Semiconductor Corporation

8,767
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

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