FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SCT3030AW7TL SICFET N-CH 650V 70A TO263-7 Rohm Semiconductor	432	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	70A (Tc)	-	39mOhm @ 27A, 18V	5.6V @ 13.3mA	104 nC @ 18 V	+22V, -4V	1526 pF @ 500 V	-	267W	175°C (TJ)	-	-	Surface Mount	TO-263-7
IXTT3N200P3HV MOSFET N-CH 2000V 3A TO268 Littelfuse Inc.	300	RFQ	Datasheet	Polar P3™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2000 V	3A (Tc)	10V	8Ohm @ 1.5A, 10V	5V @ 250µA	70 nC @ 10 V	±20V	1860 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXTT)
SCT3040KW7TL SICFET N-CH 1200V 56A TO263-7 Rohm Semiconductor	986	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	-	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	267W	175°C (TJ)	-	-	Surface Mount	TO-263-7
SCT3030ALHRC11 SICFET N-CH 650V 70A TO247N Rohm Semiconductor	445	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	70A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	104 nC @ 18 V	+22V, -4V	1526 pF @ 500 V	-	262W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
STY112N65M5 MOSFET N-CH 650V 96A MAX247 STMicroelectronics	543	RFQ	Datasheet	MDmesh™ V	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	96A (Tc)	10V	22mOhm @ 47A, 10V	5V @ 250µA	350 nC @ 10 V	±25V	16870 pF @ 100 V	-	625W (Tc)	150°C (TJ)	-	-	Through Hole	MAX247™
IXTX8N150L MOSFET N-CH 1500V 8A PLUS247-3 IXYS	256	RFQ	Datasheet	Linear	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1500 V	8A (Tc)	20V	3.6Ohm @ 4A, 20V	8V @ 250µA	250 nC @ 15 V	±30V	8000 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	849	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
S2M0025120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tj)	20V	34mOhm @ 50A, 20V	4V @ 15mA	130 nC @ 20 V	+25V, -10V	4402 pF @ 1000 V	-	446W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S2M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	270	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	130 nC @ 20 V	+25V, -10V	4402 pF @ 1000 V	-	446W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXFN80N50Q3 MOSFET N-CH 500V 63A SOT227B IXYS	140	RFQ	Datasheet	HiPerFET™, Q3 Class	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	63A (Tc)	10V	65mOhm @ 40A, 10V	6.5V @ 8mA	200 nC @ 10 V	±30V	10000 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXTN17N120L MOSFET N-CH 1200V 15A SOT-227B Littelfuse Inc.	240	RFQ	Datasheet	Linear	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	15A (Tc)	20V	900mOhm @ 8.5A, 20V	5V @ 250µA	155 nC @ 15 V	±30V	8300 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
SCT3022ALHRC11 SICFET N-CH 650V 93A TO247N Rohm Semiconductor	2,246	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	93A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	133 nC @ 18 V	+22V, -4V	2208 pF @ 500 V	-	339W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
SCT3030KLHRC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	580	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
IXTB62N50L MOSFET N-CH 500V 62A PLUS264 Littelfuse Inc.	195	RFQ	Datasheet	Linear	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	62A (Tc)	20V	100mOhm @ 31A, 20V	5.5V @ 250µA	550 nC @ 20 V	±30V	11500 pF @ 25 V	-	800W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™
IXTX1R4N450HV MOSFET N-CH 4500V 1.4A TO247PLUS Littelfuse Inc.	297	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	1.4A (Tc)	10V	40Ohm @ 50mA, 10V	6V @ 250µA	88 nC @ 10 V	±20V	3300 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247PLUS-HV
IXTN30N100L MOSFET N-CH 1000V 30A SOT227B Littelfuse Inc.	593	RFQ	Datasheet	Linear	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	30A (Tc)	20V	450mOhm @ 15A, 20V	5.5V @ 250µA	545 nC @ 20 V	±30V	13700 pF @ 25 V	-	800W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXTF1R4N450 MOSFET N-CH 4500V 1.4A I4PAC IXYS	41	RFQ	Datasheet	-	i4-Pac™-5 (3 Leads)	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	1.4A (Tc)	10V	40Ohm @ 50mA, 10V	6V @ 250µA	88 nC @ 10 V	±20V	3300 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS i4-PAC™
SCT3017ALGC11 650V, 118A, THD, TRENCH-STRUCTUR Rohm Semiconductor	435	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	118A (Tc)	18V	22.1mOhm @ 47A, 18V	5.6V @ 23.5mA	172 nC @ 18 V	+22V, -4V	2884 pF @ 500 V	-	427W	175°C (TJ)	-	-	Through Hole	TO-247N
SCT3017ALHRC11 SICFET N-CH 650V 118A TO247N Rohm Semiconductor	1,098	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	118A (Tc)	18V	22.1mOhm @ 47A, 18V	5.6V @ 23.5mA	172 nC @ 18 V	+22V, -4V	2884 pF @ 500 V	-	427W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
SCT3022KLHRC11 SICFET N-CH 1200V 95A TO247N Rohm Semiconductor	1,127	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	178 nC @ 18 V	+22V, -4V	2879 pF @ 800 V	-	427W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.