FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFK220N20X3 MOSFET N-CH 200V 220A TO264 Littelfuse Inc.	266	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	6.2mOhm @ 110A, 10V	4.5V @ 4mA	204 nC @ 10 V	±20V	13600 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
SCT3105KLHRC11 SICFET N-CH 1200V 24A TO247N Rohm Semiconductor	241	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	137mOhm @ 7.6A, 18V	5.6V @ 3.81mA	51 nC @ 18 V	+22V, -4V	574 pF @ 800 V	-	134W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
HUF75852G3 MOSFET N-CH 150V 75A TO247-3 onsemi	15	RFQ	Datasheet	UltraFET™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	75A (Tc)	10V	16mOhm @ 75A, 10V	4V @ 250µA	480 nC @ 20 V	±20V	7690 pF @ 25 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
SCT4062KRHRC15 1200V, 26A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	401	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	18V	81mOhm @ 12A, 18V	4.8V @ 6.45mA	64 nC @ 18 V	+21V, -4V	1498 pF @ 800 V	-	115W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
SCT3080AW7TL SICFET N-CH 650V 29A TO263-7 Rohm Semiconductor	905	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	29A (Tc)	-	104mOhm @ 10A, 18V	5.6V @ 5mA	48 nC @ 18 V	+22V, -4V	571 pF @ 500 V	-	125W	175°C (TJ)	-	-	Surface Mount	TO-263-7
NTBG060N090SC1 SIC MOS N-CH 900V 5.8A D2PAK-7 onsemi	786	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	5.8A (Ta), 44A (Tc)	15V	84mOhm @ 20A, 15V	4.3V @ 5mA	88 nC @ 15 V	+19V, -10V	1800 pF @ 450 V	-	3.6W (Ta), 211W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7
TW083N65C,S1F G3 650V SIC-MOSFET TO-247 83MOH Toshiba Semiconductor and Storage	142	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	113mOhm @ 15A, 18V	5V @ 600µA	28 nC @ 18 V	+25V, -10V	873 pF @ 400 V	-	111W (Tc)	175°C	-	-	Through Hole	TO-247
IXFT100N30X3HV MOSFET N-CH 300V 100A TO268HV Littelfuse Inc.	550	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	100A (Tc)	10V	13.5mOhm @ 50A, 10V	4.5V @ 4mA	122 nC @ 10 V	±20V	7660 pF @ 25 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
S2M0080120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	211	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+25V, -10V	1324 pF @ 1000 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
NTHL033N65S3HF MOSFET N-CH 650V 70A TO247-3 onsemi	402	RFQ	Datasheet	FRFET®, SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	70A (Tc)	10V	33mOhm @ 35A, 10V	5V @ 2.5mA	188 nC @ 10 V	±30V	6720 pF @ 400 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXFH54N65X3 MOSFET 54A 650V X3 TO247 Littelfuse Inc.	300	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	59mOhm @ 27A, 10V	5.2V @ 4mA	49 nC @ 10 V	±20V	3360 pF @ 25 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXFH)
IXFX180N25T MOSFET N-CH 250V 180A PLUS247-3 Littelfuse Inc.	509	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	180A (Tc)	10V	12.9mOhm @ 60A, 10V	5V @ 8mA	345 nC @ 10 V	±20V	28000 pF @ 25 V	-	1390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
SIHS90N65E-GE3 E SERIES POWER MOSFET SUPER-247, Vishay Siliconix	233	RFQ	Datasheet	E	TO-274AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	87A (Tc)	10V	29mOhm @ 45A, 10V	4V @ 250µA	591 nC @ 10 V	±30V	11826 pF @ 100 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	SUPER-247™ (TO-274AA)
S2M0080120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	260	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+25V, -10V	1324 pF @ 1000 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IMZA65R030M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	144	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	53A (Tc)	18V	42mOhm @ 29.5A, 18V	5.7V @ 8.8mA	48 nC @ 18 V	+20V, -2V	1643 pF @ 400 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-3
SCT2280KEHRC11 1200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor	410	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	14A (Tc)	18V	364mOhm @ 4A, 18V	4V @ 1.4mA	36 nC @ 400 V	+22V, -6V	667 pF @ 800 V	-	108W (Tc)	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
FCH041N65EF-F155 MOSFET N-CH 650V 76A TO247 onsemi	358	RFQ	Datasheet	FRFET®, SuperFET® II	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	76A (Tc)	10V	41mOhm @ 38A, 10V	5V @ 7.6mA	298 nC @ 10 V	±20V	12560 pF @ 100 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
NTH4L040N65S3F MOSFET N-CH 650V 65A TO247-4 onsemi	310	RFQ	Datasheet	FRFET®, SuperFET® III	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	65A (Tc)	10V	40mOhm @ 32.5A, 10V	5V @ 2.1mA	158 nC @ 10 V	±30V	5940 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L
IXTH6N120 MOSFET N-CH 1200V 6A TO247 Littelfuse Inc.	1,160	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	2.6Ohm @ 3A, 10V	5V @ 250µA	56 nC @ 10 V	±20V	1950 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFK88N30P MOSFET N-CH 300V 88A TO264AA Littelfuse Inc.	596	RFQ	Datasheet	HiPerFET™, Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	88A (Tc)	10V	40mOhm @ 44A, 10V	5V @ 4mA	180 nC @ 10 V	±20V	6300 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.