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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSS138-7-F-79 Diodes Incorporated

BSS138-7-F-79

DIODE

Diodes Incorporated

4,808
Datasheet - TO-236-3, SC-59, SOT-23-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
BSS138W-7-F-79 Diodes Incorporated

BSS138W-7-F-79

DIODE

Diodes Incorporated

9,596
Datasheet - SC-70, SOT-323 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
2N7002T-7-F-79 Diodes Incorporated

2N7002T-7-F-79

DIODE

Diodes Incorporated

7,557
Datasheet - SOT-523 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
DMN2025U Diodes Incorporated

DMN2025U

DIODE

Diodes Incorporated

6,995
Datasheet - TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 5.6A (Ta) 1.8V, 4.5V 27mOhm @ 6.5A, 4.5V 900mV @ 250µA 5.9 nC @ 4.5 V ±12V 485 pF @ 10 V - 800mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
2N7002-13-F Diodes Incorporated

2N7002-13-F

DIODE

Diodes Incorporated

2,306
Datasheet - TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.23 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
DMP2004TK Diodes Incorporated

DMP2004TK

DIODE

Diodes Incorporated

4,546
Datasheet - SOT-523 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 430mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V 1V @ 250µA 0.97 nC @ 8 V ±8V 47 pF @ 16 V - 230mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
MSC025SMA330B4 Microchip Technology

MSC025SMA330B4

MOSFET SIC 3300 V 25 MOHM TO-247

Microchip Technology

5,810
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A (Tc) 20V 31mOhm @ 40A, 20V 2.7V @ 7mA 410 nC @ 20 V +23V, -10V 8720 pF @ 2640 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
IPB042N10NF2SATMA1 Infineon Technologies

IPB042N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

5,414
Datasheet * - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
CMS03N06T-HF Comchip Technology

CMS03N06T-HF

MOSFET N-CH 60V 3A SOT23-3

Comchip Technology

7,640
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 105mOhm @ 3A, 10V 2V @ 250µA 14.6 nC @ 10 V ±20V 510 pF @ 30 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
CMS09N10D-HF Comchip Technology

CMS09N10D-HF

MOSFET N-CH 100V 9.6A DPAK

Comchip Technology

3,960
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.6A (Tc) 10V 140mOhm @ 6A, 10V 2.5V @ 250µA 15.5 nC @ 10 V ±20V 690 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
CMS12P03Q8-HF Comchip Technology

CMS12P03Q8-HF

MOSFET P-CH 30V 12A 8SOP

Comchip Technology

2,880
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.2V @ 250µA 44.4 nC @ 10 V ±20V 2419 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
AUIRFU8403-701TRL Infineon Technologies

AUIRFU8403-701TRL

MOSFET

Infineon Technologies

8,521
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-21
P3M173K0T3 PN Junction Semiconductor

P3M173K0T3

SICFET N-CH 1700V 4A TO-220-3

PN Junction Semiconductor

7,965
Datasheet P3M TO-220-2 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A 15V 2.6Ohm @ 600mA, 15V 2.2V @ 600µA (Typ) - +19V, -8V - - 75W -55°C ~ 175°C (TJ) - - Through Hole TO-220-2L
P3M12025K4 PN Junction Semiconductor

P3M12025K4

SICFET N-CH 1200V 112A TO-247-4

PN Junction Semiconductor

4,264
Datasheet P3M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 112A 15V 35mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 577W -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
P3M171K0K3 PN Junction Semiconductor

P3M171K0K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor

3,426
Datasheet P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 68W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M12080K3 PN Junction Semiconductor

P3M12080K3

SICFET N-CH 1200V 47A TO-247-3

PN Junction Semiconductor

2,339
Datasheet P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M06040K3 PN Junction Semiconductor

P3M06040K3

SICFET N-CH 650V 68A TO247-3

PN Junction Semiconductor

7,418
Datasheet P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M12160K3 PN Junction Semiconductor

P3M12160K3

SICFET N-CH 1200V 19A TO-247-3

PN Junction Semiconductor

4,073
Datasheet P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A 15V 192mOhm @ 10A, 15V 2.4V @ 2.5mA (Typ) - +21V, -8V - - 110W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M12080K4 PN Junction Semiconductor

P3M12080K4

SICFET N-CH 1200V 47A TO-247-4

PN Junction Semiconductor

4,112
Datasheet P3M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
P3M06060T3 PN Junction Semiconductor

P3M06060T3

SICFET N-CH 650V 46A TO220-3

PN Junction Semiconductor

6,339
Datasheet P3M TO-220-2 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 46A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 170W -55°C ~ 175°C (TJ) - - Through Hole TO-220-2L
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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