FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT5010JLLU3 MOSFET N-CH 500V 41A SOT227 Microchip Technology	9,410	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	41A (Tc)	10V	100mOhm @ 23A, 10V	5V @ 2.5mA	96 nC @ 10 V	±30V	4360 pF @ 25 V	-	378W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
IXFN34N100 MOSFET N-CH 1000V 34A SOT-227B IXYS	6,036	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1000 V	34A (Tc)	10V	280mOhm @ 500mA, 10V	5.5V @ 8mA	380 nC @ 10 V	±20V	9200 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
AIMZHN120R010M1TXKSA1 SIC_DISCRETE Infineon Technologies	7,951	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	202A (Tc)	18V, 20V	11.3mOhm @ 93A, 20V	5.1V @ 30mA	178 nC @ 20 V	+23V, -5V	5703 pF @ 800 V	-	750W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-14
STE70NM50 MOSFET N-CH 500V 70A ISOTOP STMicroelectronics	3,647	RFQ	Datasheet	MDmesh™	ISOTOP	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	70A (Tc)	10V	50mOhm @ 30A, 10V	5V @ 250µA	266 nC @ 10 V	±30V	7500 pF @ 25 V	-	600W (Tc)	150°C (TJ)	-	-	Chassis Mount	ISOTOP®
IXFN24N100 MOSFET N-CH 1KV 24A SOT-227B Littelfuse Inc.	8,383	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	1000 V	24A (Tc)	10V	390mOhm @ 12A, 10V	5.5V @ 8mA	267 nC @ 10 V	±20V	8700 pF @ 25 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
STE26NA90 MOSFET N-CH 900V 26A ISOTOP STMicroelectronics	4,972	RFQ	Datasheet	-	ISOTOP	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	26A (Tc)	10V	300mOhm @ 13A, 10V	3.75V @ 1mA	660 nC @ 10 V	±30V	1770 pF @ 25 V	-	450W (Tc)	150°C (TJ)	-	-	Chassis Mount	ISOTOP®
APT21M100J MOSFET N-CH 1000V 21A ISOTOP Microchip Technology	5,714	RFQ	Datasheet	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	21A (Tc)	10V	380mOhm @ 16A, 10V	5V @ 2.5mA	260 nC @ 10 V	±30V	8500 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
APT58M50JU2 MOSFET N-CH 500V 58A SOT227 Microchip Technology	3,653	RFQ	Datasheet	POWER MOS 8™	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	10V	65mOhm @ 42A, 10V	5V @ 2.5mA	340 nC @ 10 V	±30V	10800 pF @ 25 V	-	543W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
APT58M50JU3 MOSFET N-CH 500V 58A SOT227 Microchip Technology	7,124	RFQ	Datasheet	POWER MOS 8™	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	10V	65mOhm @ 42A, 10V	5V @ 2.5mA	340 nC @ 10 V	±30V	10800 pF @ 25 V	-	543W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
APT19F100J MOSFET N-CH 1000V 20A ISOTOP Microchip Technology	3	RFQ	Datasheet	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	20A (Tc)	10V	440mOhm @ 16A, 10V	5V @ 2.5mA	260 nC @ 10 V	±30V	8500 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
IV1Q12050T3 SIC MOSFET, 1200V 50MOHM, TO-247 Inventchip	6,664	RFQ	Datasheet	-	TO-247-3		Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	58A (Tc)	20V	65mOhm @ 20A, 20V	3.2V @ 6mA	120 nC @ 20 V	+20V, -5V	2770 pF @ 800 V	-	327W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
UJ4SC075010L8SSB 750V/10MO,SICFET,G4,TOLL Qorvo	9,945	RFQ	Datasheet	-	8-PowerSFN	Bulk	Active	N-Channel, Depletion Mode	SiCFET (Silicon Carbide)	750 V	106A (Tc)	12V	14.2mOhm @ 60A, 12V	5.5V @ 10mA	75 nC @ 15 V	±20V	3245 pF @ 400 V	-	556W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL
APT6010B2FLLG MOSFET N-CH 600V 54A T-MAX Microchip Technology	3,735	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	54A (Tc)	-	100mOhm @ 27A, 10V	5V @ 2.5mA	150 nC @ 10 V	-	6710 pF @ 25 V	-	-	-	-	-	Through Hole	T-MAX™ [B2]
APT80SM120S SICFET N-CH 1200V 80A D3PAK Microsemi Corporation	2,840	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	80A (Tc)	20V	55mOhm @ 40A, 20V	2.5V @ 1mA	235 nC @ 20 V	+25V, -10V	-	-	625W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
IXFN60N60 MOSFET N-CH 600V 60A SOT-227B IXYS	8,995	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	60A (Tc)	10V	75mOhm @ 500mA, 10V	4.5V @ 8mA	380 nC @ 10 V	±20V	15000 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
APT8020LLLG MOSFET N-CH 800V 38A TO264 Microchip Technology	2,455	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	38A (Tc)	-	200mOhm @ 19A, 10V	5V @ 2.5mA	195 nC @ 10 V	-	5200 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
IXTT1N250HV-TRL MOSFET N-CH 2500V 1.5A TO268HV Littelfuse Inc.	7,289	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	1.5A (Tc)	10V	40Ohm @ 750mA, 10V	4V @ 250µA	41 nC @ 10 V	±20V	1660 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXTT)
IV1Q12050T4 SIC MOSFET, 1200V 50MOHM, TO-247 Inventchip	3,082	RFQ	Datasheet	-	TO-247-4		Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	58A (Tc)	20V	65mOhm @ 20A, 20V	3.2V @ 6mA	120 nC @ 20 V	+20V, -5V	2750 pF @ 800 V	-	344W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT10045B2LLG MOSFET N-CH 1000V 23A T-MAX Microchip Technology	7,545	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	23A (Tc)	10V	450mOhm @ 11.5A, 10V	5V @ 2.5mA	154 nC @ 10 V	±30V	4350 pF @ 25 V	-	565W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT10035LLLG MOSFET N-CH 1000V 28A TO264 Microchip Technology	2,480	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	28A (Tc)	10V	350mOhm @ 14A, 10V	5V @ 2.5mA	186 nC @ 10 V	±30V	5185 pF @ 25 V	-	690W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.