FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STB31N65M5 MOSFET N-CH 650V 22A D2PAK STMicroelectronics	9,068	RFQ	Datasheet	MDmesh™ V	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	148mOhm @ 11A, 10V	5V @ 250µA	45 nC @ 10 V	±25V	1865 pF @ 100 V	-	150W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
2SK3318 MOSFET N-CH 600V 15A TOP-3F-A1 Panasonic Electronic Components	5,908	RFQ	Datasheet	-	TOP-3F	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	460mOhm @ 7.5A, 10V	4V @ 1mA	-	±30V	3500 pF @ 20 V	-	3W (Ta), 100W (Tc)	150°C (TJ)	-	-	Through Hole	TOP-3F-A1
IRFPF30 MOSFET N-CH 900V 3.6A TO247-3 Vishay Siliconix	8,337	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	3.6A (Tc)	10V	3.7Ohm @ 2.2A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTA02N250 MOSFET N-CH 2500V 200MA TO263 IXYS	5,962	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
AOK065A60 N Alpha & Omega Semiconductor Inc.	2,797	RFQ	Datasheet	aMOS5™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4.1A (Ta), 20A (Tc)	10V	-	-	34 nC @ 10 V	20V	1935 pF @ 100 V	-	8.3W (Ta), 208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
SIHH21N60E-T1-GE3 MOSFET N-CH 600V 20A PPAK 8 X 8 Vishay Siliconix	2,099	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	176mOhm @ 11A, 10V	4V @ 250µA	83 nC @ 10 V	±30V	2015 pF @ 100 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
TSM60NB150CF 600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	8,105	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	150mOhm @ 4.3A, 10V	4V @ 250µA	43 nC @ 10 V	±30V	1765 pF @ 100 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220S
IXTH20N65X MOSFET N-CH 650V 20A TO247 IXYS	8,230	RFQ	Datasheet	Ultra X	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	210mOhm @ 10A, 10V	5.5V @ 250µA	35 nC @ 10 V	±30V	1390 pF @ 25 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
STU16N65M5 MOSFET N-CH 650V 12A IPAK STMicroelectronics	5	RFQ	Datasheet	MDmesh™ V	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	299mOhm @ 6A, 10V	5V @ 250µA	45 nC @ 10 V	±25V	1250 pF @ 100 V	-	90W (Tc)	150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)
IRFPG30 MOSFET N-CH 1000V 3.1A TO247-3 Vishay Siliconix	6,836	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	5Ohm @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	980 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTP32N65X MOSFET N-CH 650V 32A TO220-3 IXYS	7,490	RFQ	Datasheet	Ultra X	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	135mOhm @ 16A, 10V	5.5V @ 250µA	54 nC @ 10 V	±30V	2205 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
SIHH11N65E-T1-GE3 MOSFET N-CH 650V 12A PPAK 8 X 8 Vishay Siliconix	6,942	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	363mOhm @ 6A, 10V	4V @ 250µA	68 nC @ 10 V	±30V	1257 pF @ 100 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
SCT2280KEC SICFET N-CH 1200V 14A TO247 Rohm Semiconductor	2,243	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	14A (Tc)	18V	364mOhm @ 4A, 18V	4V @ 1.4mA	36 nC @ 18 V	+22V, -6V	667 pF @ 800 V	-	108W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247
IXTH75N15 MOSFET N-CH 150V 75A TO247 IXYS	4,387	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	75A (Tc)	10V	23mOhm @ 500mA, 10V	4V @ 250µA	210 nC @ 10 V	±20V	5400 pF @ 25 V	-	330W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFA6N120P-TRL MOSFET N-CH 1200V 6A TO263 Littelfuse Inc.	5,207	RFQ	Datasheet	HiPerFET™, Polar	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	2.4Ohm @ 500mA, 10V	5V @ 1mA	92 nC @ 10 V	±30V	2830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)
IRF7749L2TRPBF MOSFET N-CH 60V 33A DIRECTFET Infineon Technologies	2,873	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	33A (Ta), 375A (Tc)	10V	1.5mOhm @ 120A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	12320 pF @ 25 V	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric L8
DMWSH120H90SCT7 LINEAR IC Diodes Incorporated	4,746	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	38.2A (Tc)	15V	90mOhm @ 20A, 15V	3.5V @ 5mA	54.6 nC @ 15 V	+19V, -8V	1078 pF @ 1000 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
2SK4209 MOSFET N-CH 800V 12A TO3PB onsemi	5,110	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	12A (Ta)	10V	1.08Ohm @ 6A, 10V	4V @ 1mA	75 nC @ 10 V	±30V	1500 pF @ 30 V	-	2.5W (Ta), 190W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3PB
IXFH6N100F MOSFET N-CH 1000V 6A TO247 Littelfuse Inc.	9,313	RFQ	Datasheet	HiPerFET™, F Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	6A (Tc)	10V	1.9Ohm @ 3A, 10V	5.5V @ 2.5mA	54 nC @ 10 V	±20V	1770 pF @ 25 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXFH)
STP65N045M9 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	5,234	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	245W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.