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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXTA50N25T Littelfuse Inc.

IXTA50N25T

MOSFET N-CH 250V 50A TO263

Littelfuse Inc.

9,648
Datasheet Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 50mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
NVMFS5C604NLWFAFT3G onsemi

NVMFS5C604NLWFAFT3G

MOSFET N-CH 60V 287A 5DFN

onsemi

4,433
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
TSM80N950CP Taiwan Semiconductor Corporation

TSM80N950CP

800V, 6A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,221
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM80N950CH Taiwan Semiconductor Corporation

TSM80N950CH

800V, 6A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,807
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
IXTQ90N15T IXYS

IXTQ90N15T

MOSFET N-CH 150V 90A TO3P

IXYS

8,371
Datasheet Trench TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 20mOhm @ 45A, 10V 4.5V @ 1mA 80 nC @ 10 V ±30V 4100 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
ZXM66P02N8TA Diodes Incorporated

ZXM66P02N8TA

MOSFET P-CH 20V 6.4A 8SO

Diodes Incorporated

9,435
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.4A (Ta) 2.5V, 4.5V 25mOhm @ 3.2A, 4.5V 700mV @ 250µA (Min) 43.3 nC @ 4.5 V ±12V 2068 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
SI7366DP-T1-E3 Vishay Siliconix

SI7366DP-T1-E3

MOSFET N-CH 20V 13A PPAK SO-8

Vishay Siliconix

4,062
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 13A (Ta) 4.5V, 10V 5.5mOhm @ 20A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V - - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIE800DF-T1-E3 Vishay Siliconix

SIE800DF-T1-E3

MOSFET N-CH 30V 50A 10POLARPAK

Vishay Siliconix

6,007
Datasheet TrenchFET® 10-PolarPAK® (S) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.2mOhm @ 11A, 10V 3V @ 250µA 35 nC @ 10 V ±20V 1600 pF @ 15 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (S)
SUM40N10-30-E3 Vishay Siliconix

SUM40N10-30-E3

MOSFET N-CH 100V 40A TO263

Vishay Siliconix

7,849
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 6V, 10V 30mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2400 pF @ 25 V - 3.75W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIR866DP-T1-GE3 Vishay Siliconix

SIR866DP-T1-GE3

MOSFET N-CH 20V 60A PPAK SO-8

Vishay Siliconix

3,225
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2.3V @ 250µA 107 nC @ 10 V ±20V 4730 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SI4427BDY-T1-GE3 Vishay Siliconix

SI4427BDY-T1-GE3

MOSFET P-CH 30V 9.7A 8SO

Vishay Siliconix

6,579
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9.7A (Ta) 10V 10.5mOhm @ 12.6A, 10V 1.4V @ 250µA 70 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI7390DP-T1-E3 Vishay Siliconix

SI7390DP-T1-E3

MOSFET N-CH 30V 9A PPAK SO-8

Vishay Siliconix

5,221
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 15 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SUD40N04-10A-E3 Vishay Siliconix

SUD40N04-10A-E3

MOSFET N-CH 40V 40A TO252

Vishay Siliconix

4,367
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 10mOhm @ 40A, 10V 3V @ 250µA 35 nC @ 10 V ±20V 1700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
STW15NB50 STMicroelectronics

STW15NB50

MOSFET N-CH 500V 14.6A TO247-3

STMicroelectronics

4,173
Datasheet PowerMESH™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14.6A (Tc) 10V 360mOhm @ 7.5A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 3400 pF @ 25 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-247-3
AUIRFS3206TRL Infineon Technologies

AUIRFS3206TRL

MOSFET N-CH 60V 210A D2PAK

Infineon Technologies

5,764
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
BTS247ZE3062AATMA2 Infineon Technologies

BTS247ZE3062AATMA2

MOSFET N-CH 55V 33A TO263-5

Infineon Technologies

6,302
Datasheet TEMPFET® TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2V @ 90µA 90 nC @ 10 V ±20V 1730 pF @ 25 V Temperature Sensing Diode 120W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount PG-TO263-5-2
IXTP2N100 Littelfuse Inc.

IXTP2N100

MOSFET N-CH 1000V 2A TO220AB

Littelfuse Inc.

4,218
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7Ohm @ 1A, 10V 4.5V @ 250µA 40 nC @ 10 V ±20V 825 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AOK60N30L Alpha & Omega Semiconductor Inc.

AOK60N30L

MOSFET N-CH 300V 60A TO247

Alpha & Omega Semiconductor Inc.

8,187
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 56mOhm @ 30A, 10V 4.1V @ 250µA 106 nC @ 10 V ±30V 5330 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
IRFP448PBF Vishay Siliconix

IRFP448PBF

MOSFET N-CH 500V 11A TO247-3

Vishay Siliconix

2,278
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IXTA260N055T2 Littelfuse Inc.

IXTA260N055T2

MOSFET N-CH 55V 260A TO263

Littelfuse Inc.

8,831
Datasheet TrenchT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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