FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFBC30SPBF MOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix	9,560	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4V @ 250µA	31 nC @ 10 V	±20V	660 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
FQA10N80 MOSFET N-CH 800V 9.8A TO3P onsemi	4,262	RFQ	Datasheet	QFET®	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	9.8A (Tc)	10V	1.05Ohm @ 4.9A, 10V	5V @ 250µA	71 nC @ 10 V	±30V	2700 pF @ 25 V	-	240W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
IPP06CNE8N G MOSFET N-CH 85V 100A TO220-3 Infineon Technologies	6,630	RFQ	Datasheet	OptiMOS™ 2	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	85 V	100A (Tc)	10V	6.5mOhm @ 100A, 10V	4V @ 180µA	138 nC @ 10 V	±20V	9240 pF @ 40 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
STP80NE03L-06 MOSFET N-CH 30V 80A TO220AB STMicroelectronics	2,364	RFQ	Datasheet	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	80A (Tc)	5V, 10V	6mOhm @ 40A, 10V	2.5V @ 250µA	130 nC @ 5 V	±22V	8700 pF @ 25 V	-	150W (Tc)	175°C (TJ)	-	-	Through Hole	TO-220
STP13NK50Z MOSFET N-CH 500V 11A TO220AB STMicroelectronics	5,931	RFQ	Datasheet	SuperMESH™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	480mOhm @ 6.5A, 10V	4.5V @ 100µA	47 nC @ 10 V	±30V	1600 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
IRF840LPBF MOSFET N-CH 500V 8A TO263AB Vishay Siliconix	4,565	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	850mOhm @ 4.8A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFL110 MOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix	3,030	RFQ	Datasheet	-	TO-261-4, TO-261AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	1.5A (Tc)	10V	540mOhm @ 900mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	2W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRFL110TR MOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix	7,458	RFQ	Datasheet	-	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	1.5A (Tc)	10V	540mOhm @ 900mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	2W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRF6611 MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies	2,201	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Ta), 150A (Tc)	4.5V, 10V	2.6mOhm @ 27A, 10V	2.25V @ 250µA	56 nC @ 4.5 V	±20V	4860 pF @ 15 V	-	3.9W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
SI7374DP-T1-E3 MOSFET N-CH 30V 24A PPAK SO-8 Vishay Siliconix	2,630	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	24A (Tc)	4.5V, 10V	5.5mOhm @ 23.8A, 10V	2.8V @ 250µA	122 nC @ 10 V	±20V	5500 pF @ 15 V	-	5W (Ta), 56W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SIE832DF-T1-E3 MOSFET N-CH 40V 50A 10POLARPAK Vishay Siliconix	4,546	RFQ	Datasheet	TrenchFET®	10-PolarPAK® (S)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	5.5mOhm @ 14A, 10V	3V @ 250µA	77 nC @ 10 V	±20V	3800 pF @ 20 V	-	5.2W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	10-PolarPAK® (S)
SI7374DP-T1-GE3 MOSFET N-CH 30V 24A PPAK SO-8 Vishay Siliconix	4,841	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	24A (Tc)	4.5V, 10V	5.5mOhm @ 23.8A, 10V	2.8V @ 250µA	122 nC @ 10 V	±20V	5500 pF @ 15 V	-	5W (Ta), 56W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SI7476DP-T1-GE3 MOSFET N-CH 40V 15A PPAK SO-8 Vishay Siliconix	8,567	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	15A (Ta)	4.5V, 10V	5.3mOhm @ 25A, 10V	3V @ 250µA	177 nC @ 10 V	±20V	-	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
PSMN3R5-80ES,127 MOSFET N-CH 80V 120A I2PAK Nexperia USA Inc.	2,313	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	3.5mOhm @ 25A, 10V	4V @ 1mA	139 nC @ 10 V	±20V	9800 pF @ 30 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
PSMN5R0-100ES,127 MOSFET N-CH 100V 120A I2PAK Nexperia USA Inc.	7,865	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	5mOhm @ 25A, 10V	4V @ 1mA	170 nC @ 10 V	±20V	9900 pF @ 50 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
PSMN4R3-100ES,127 MOSFET N-CH 100V 120A I2PAK Nexperia USA Inc.	6,385	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	4.5V, 10V	4.3mOhm @ 25A, 10V	4V @ 1mA	170 nC @ 10 V	±20V	9900 pF @ 50 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IGLD65R140D2AUMA1 GAN HV Infineon Technologies	6,332	RFQ	Datasheet	CoolGaN™	8-LDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	12A (Tc)	-	-	1.6V @ 1mA	2.6 nC @ 3 V	-10V	130 pF @ 400 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-LSON-8-1
SUP85N10-10P-GE3 MOSFET N-CH 100V 85A TO220AB Vishay Siliconix	2,507	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	85A (Tc)	10V	10mOhm @ 20A, 10V	4.5V @ 250µA	120 nC @ 10 V	±20V	4660 pF @ 50 V	-	3.75W (Ta), 227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SPI70N10L MOSFET N-CH 100V 70A TO262-3 Infineon Technologies	7,537	RFQ	Datasheet	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	70A (Tc)	4.5V, 10V	16mOhm @ 50A, 10V	2V @ 2mA	240 nC @ 10 V	±20V	4540 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3-1
IXTA1N80 MOSFET N-CH 800V 750MA TO263 IXYS	4,167	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	750mA (Tc)	10V	11Ohm @ 500mA, 10V	4.5V @ 25µA	8.5 nC @ 10 V	±20V	220 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.