FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPS110N12N3GBKMA1MOSFET N-CH 120V 75A TO251-3 |
3,405 |
|
Datasheet | OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 75A (Tc) | 10V | 11mOhm @ 75A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4310 pF @ 60 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPB031NE7N3GATMA1MOSFET N-CH 75V 100A TO263-3 |
8,131 |
|
Datasheet | OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 3.8V @ 155µA | 117 nC @ 10 V | ±20V | 8130 pF @ 37.5 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRF1405ZSTRL7PPMOSFET N-CH 55V 120A D2PAK |
5,700 |
|
Datasheet | HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF6201TRPBFMOSFET N-CH 20V 27A 8SO |
9,338 |
|
Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | 1.1V @ 100µA | 195 nC @ 4.5 V | ±12V | 8555 pF @ 16 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7424GTRPBFMOSFET P-CH 30V 11A 8SO |
3,589 |
|
Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF7524D1GTRPBFMOSFET P-CH 20V 1.7A 8USMD |
3,931 |
|
Datasheet | FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA (Min) | 8.2 nC @ 4.5 V | ±12V | 240 pF @ 15 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-uSMD |
|
|
IRF8113GTRPBFMOSFET N-CH 30V 17.2A 8SO |
6,891 |
|
Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF9204PBFMOSFET P-CH 40V 56A TO220AB |
4,663 |
|
Datasheet | HEXFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Ta) | 4.5V, 10V | 16mOhm @ 37A, 10V | 3V @ 100µA | 224 nC @ 10 V | ±20V | 7676 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRFB3077GPBFMOSFET N-CH 75V 120A TO220AB |
8,640 |
|
Datasheet | HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 9400 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRFB4310GPBFMOSFET N-CH 100V 130A TO220AB |
3,214 |
|
Datasheet | HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
