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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPI040N06N3GHKSA1 Infineon Technologies

IPI040N06N3GHKSA1

MOSFET N-CH 60V 90A TO262-3

Infineon Technologies

3,328
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI100N08N3GHKSA1 Infineon Technologies

IPI100N08N3GHKSA1

MOSFET N-CH 80V 70A TO262-3

Infineon Technologies

9,192
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 10mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI100N08S207AKSA1 Infineon Technologies

IPI100N08S207AKSA1

MOSFET N-CH 75V 100A TO262-3

Infineon Technologies

9,974
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI139N08N3GHKSA1 Infineon Technologies

IPI139N08N3GHKSA1

MOSFET N-CH 80V 45A TO262-3

Infineon Technologies

4,294
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI200N15N3 G Infineon Technologies

IPI200N15N3 G

MOSFET N-CH 150V 50A TO262-3

Infineon Technologies

5,550
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 8V, 10V 20mOhm @ 50A, 10V 4V @ 90µA 31 nC @ 10 V ±20V 1820 pF @ 75 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI22N03S4L15AKSA1 Infineon Technologies

IPI22N03S4L15AKSA1

MOSFET N-CH 30V 22A TO262-3

Infineon Technologies

4,867
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.9mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI50CN10NGHKSA1 Infineon Technologies

IPI50CN10NGHKSA1

MOSFET N-CH 100V 20A TO262-3

Infineon Technologies

5,686
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPI50R399CPXKSA1 Infineon Technologies

IPI50R399CPXKSA1

MOSFET N-CH 500V 9A TO262-3

Infineon Technologies

3,831
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI60R520CPAKSA1 Infineon Technologies

IPI60R520CPAKSA1

MOSFET N-CH 600V 6.8A TO262-3

Infineon Technologies

8,095
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 340µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI70N04S307AKSA1 Infineon Technologies

IPI70N04S307AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

2,985
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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